Patents by Inventor Daniel Robert Ward

Daniel Robert Ward has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11798808
    Abstract: A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: October 24, 2023
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Shashank Misra, Daniel Robert Ward, DeAnna Marie Campbell, Tzu-Ming Lu, Scott William Schmucker, Evan Michael Anderson, Andrew Jay Leenheer, Jeffrey Andrew Ivie
  • Patent number: 11424135
    Abstract: In a method of atomic precision advanced manufacturing (APAM), an atomic or molecular resist layer on a substrate surface is selectively depassivated by locally exciting the substrate surface with an optical beam effective to eject adsorbed atoms or molecules from the substrate surface. The substrate surface is further processed by exposing it to a precursor gas, decomposing the precursor gas to release a dopant, and incorporating the dopant into the substrate surface.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: August 23, 2022
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Aaron Michael Katzenmeyer, Shashank Misra, Andrew David Baczewski, Evan Michael Anderson, George T. Wang, Daniel Robert Ward
  • Patent number: 10482388
    Abstract: Methods and apparatus of quantum information processing using quantum dots are provided. Electrons from a 2DEG are confined to the quantum dots and subjected to a magnetic field having a component directed parallel to the interface. Due to interfacial asymmetries, there is created an effective magnetic field that perturbs the energies of the spin states via an interfacial spin-orbit (SO) interaction. This SO interaction is utilized to controllably produce rotations of the electronic spin state, such as X-rotations of the electronic spin state in a double quantum dot (DQD) singlet-triplet (ST) qubit. The desired state rotations are controlled solely by the use of electrical pulses.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: November 19, 2019
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Ryan Michael Jock, Martin Rudolph, Andrew David Baczewski, Wayne Witzel, Malcom S. Carroll, Patrick Harvey-Collard, John King Gamble, IV, Noah Tobias Jacobson, Andrew Mounce, Daniel Robert Ward
  • Patent number: 8223330
    Abstract: A method for producing planar extended electrodes with nanoscale spacings that exhibit very large SERS signals, with each nanoscale gap having one well-defined hot spot. The resulting highly sensitive substrate has extended metal electrodes separated by a nanoscale gap. The electrodes act as optical antennas to enhance dramatically the local electromagnetic field for purposes of spectroscopy or nonlinear optics. SERS response is consistent with a very small number of molecules in the hotspot, showing blinking and wandering of Raman lines. Sensitivity is sufficiently high that SERS from physisorbed atmospheric contaminants may be detected after minutes of exposure to ambient conditions.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: July 17, 2012
    Assignee: William Marsh Rice University
    Inventors: Douglas Natelson, Daniel Robert Ward, Zachary Kyle Keane
  • Publication number: 20120154800
    Abstract: A method for producing planar extended electrodes with nanoscale spacings that exhibit very large SERS signals, with each nanoscale gap having one well-defined hot spot. The resulting highly sensitive substrate has extended metal electrodes separated by a nanoscale gap. The electrodes act as optical antennas to enhance dramatically the local electromagnetic field for purposes of spectroscopy or nonlinear optics. SERS response is consistent with a very small number of molecules in the hotspot, showing blinking and wandering of Raman lines. Sensitivity is sufficiently high that SERS from physisorbed atmospheric contaminants may be detected after minutes of exposure to ambient conditions.
    Type: Application
    Filed: February 12, 2008
    Publication date: June 21, 2012
    Inventors: Douglas Natelson, Daniel Robert Ward, Zachary Kyle Keane
  • Patent number: D528961
    Type: Grant
    Filed: October 31, 2005
    Date of Patent: September 26, 2006
    Inventors: Daniel Robert Ward, Robert Dorsey Ward