Abstract: The present invention relates to a use of bismuth ferrite crystals to detect a part of interest in biological samples. In order to provide a method which is cost-effective and in which a measurement can be carried out with a high degree of accuracy and which is quantifiable, the invention proposed that the part is marked with one or more bismuth ferrite crystals in a biological sample to be examined and the part marked in this manner is detected in the biological sample using at least one magnetic measuring method and at least on one optical measuring method.

Abstract: Crystals of the yttrium/aluminium/borate family are used for producing UV light. To produce UV light with the described crystal family a crystal of the family AxM1-xX3(BO3)4, wherein both A and also M stand for an element from the group Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A?M and X is selected from the group consisting of Al, Ga, Sc and 0?x?1, is used as a non-linear optical element to produce light of a wavelength of less than 0.450 ?m.

Abstract: Crystals of the yttrium/aluminium/borate family are used for producing blue or UV light. To produce blue or UV light with the described crystal family a crystal of the family AxM1-xX3(BO3)4, wherein both A and also M stand for an element from the group Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A?M and X=Al, Ga, Sc and 0?x?1, is used as a non-linear optical element to produce light of a wavelength of less than 0.450 ?m.

Abstract: The method of making uniform low-stress crystals includes immersing a seed crystal held at a temperature under its melting point in a melt in a crucible and drawing it from the melt. The crystal and/or melt are rotated relative to each other and a planar phase boundary surface is maintained between them by detecting a surface temperature of the melt and/or crystal and controlling temperature fluctuations by increasing or decreasing the rotation speed. A low-stress crystal of formula: (A1-xDx)3Al5O12 wherein 0<x<1, A=Lu and D=Pr and/or Ce, is preferred. These crystals have an index of refraction uniformity ?n of <1 ppm and a stress birefringence of <1 nm/cm at 193 nm, so that they are suitable for making optical elements for DUV lithography.

Abstract: The method of making uniform low-stress crystals includes immersing a seed crystal held at a temperature under its melting point in a melt in a crucible and drawing it from the melt. The crystal and/or melt are rotated relative to each other and a planar phase boundary surface is maintained between them by detecting a surface temperature of the melt and/or crystal and controlling temperature fluctuations by increasing or decreasing the rotation speed. The single crystals obtained by this method have a diameter ?50 mm and no visible growth strips in a fishtail pattern when a 2-mm thick sample is observed between crossed polarizers. These crystals have an index of refraction uniformity ?n of <1 ppm and a stress birefringence of <1 nm/cm at 193 nm, so that optical elements suitable for DUV lithography can be made from them.

Abstract: The present invention concerns a method of producing blue or UV light. To produce blue or UV light with the described crystal family it is proposed according to the invention that a crystal of the family AxM1-xX3(BO3)4, wherein both A and also M stand for an element from the group Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A?M and X?Al, Ga, Sc and 0?x?1, is used as a non-linear optical element to produce light of a wavelength of less than 0.450 ?m.

Abstract: The method of making uniform low-stress crystals includes immersing a seed crystal held at a temperature under its melting point in a melt in a crucible and drawing it from the melt. The crystal and/or melt are rotated relative to each other and a planar phase boundary surface is maintained between them by detecting a surface temperature of the melt and/or crystal and controlling temperature fluctuations by increasing or decreasing the rotation speed. The single crystals obtained by this method have a diameter ?50 mm and no visible growth strips in a fishtail pattern when a 2-mm thick sample is observed between crossed polarizers. These crystals have an index of refraction uniformity ?n of <1 ppm and a stress birefringence of <1 nm/cm at 193 nm, so that optical elements suitable for DUV lithography can be made from them.

Abstract: The method provides a uniform low-stress single crystal in a predetermined crystal orientation. The method of making it includes immersing a single crystal held at a temperature under its melting point in a melt of crystal raw material and drawing it from the melt to grow the crystal. The crystal and/or melt are rotated relative to each other during the crystal growth. A planar phase boundary surface is maintained by detecting at least one characteristic surface temperature in an interior of a crucible containing the melt and controlling temperature fluctuations by increasing or decreasing the rotation speed when they occur. The single crystals obtained by this method have a diameter of at least 50 mm and no visible growth strips in a fishtail pattern when a 2-mm thick sample is observed between crossed polarizers. Optical elements suitable for DUV lithography can be made from these crystals.

Abstract: The method provides a uniform low-stress single crystal in a predetermined crystal orientation. The method of making it includes immersing a single crystal held at a temperature under its melting point in a melt of crystal raw material and drawing it from the melt to grow the crystal. The crystal and/or melt are rotated relative to each other during the crystal growth. A planar phase boundary surface is maintained by detecting at least one characteristic surface temperature in an interior of a crucible containing the melt and controlling temperature fluctuations by increasing or decreasing the rotation speed when they occur. The single crystals obtained by this method have a diameter of at least 50 mm and no visible growth strips in a fishtail pattern when a 2-mm thick sample is observed between crossed polarizers. Optical elements suitable for DUV lithography can be made from these crystals.

Abstract: The process for growing single crystals, wherein crystal material is melted in a crucible and a crystal nucleus is immersed in the molten crystal material and slowly pulled out, wherein the crystal formed during the pulling is kept at a temperature close to melting temperature of the output material. The invention also includes a device for practicing the above process.

Abstract: The present invention concerns a laser with a laser crystal in wafer form. In order to provide a laser apparatus with laser materials in wafer form which are improved over the state of the art, and a process for the production of improved laser materials in wafer form for such laser apparatuses, it is proposed in accordance with the invention that the laser crystal is of the chemical composition MIRIII(WO4)2, wherein M1 stands for an alkali metal, RIII stands for a lanthanide and X stands for a laser-active doping substance.

Abstract: The process for growing single crystals, wherein crystal material is melted in a crucible and a crystal nucleus is immersed in the molten crystal material and slowly pulled out, wherein the crystal formed during the pulling is kept at a temperature close to melting temperature of the output material. The invention also includes a device for practicing the above process.

Abstract: A crystal holder for use with photorefractive crystals comprises a horizontal rotatable planar member on which is mounted a crystal, such that the axis of rotation of the planar member lies on a face of the crystal on which a beam of light impinges. In a preferred embodiment, the crystal may be moved such that the axis of rotation continues to lie on the face of the crystal over at least a substantial portion of the face. The crystal holders of this invention are useful, for example, in phase conjugate mirrors.