Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A method for generating a write pattern to be used in a maskless-lithography process is described. During the method, a computer system determines a one-to-one correspondence between pixels in the write pattern and at least a subset of elements in a spatial-light modulator used in the maskless-lithography process. Furthermore, the computer system generates the write pattern. Note that the write pattern includes features corresponding to at least the subset of elements in the spatial-light modulator, and the generating is in accordance with a characteristic dimension of an element in the spatial-light modulator and a target pattern that is to be printed on a semiconductor wafer during the maskless-lithography process.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A method for generating a write pattern to be used in a maskless-lithography process is described. During the method, a computer system determines a one-to-one correspondence between pixels in the write pattern and at least a subset of elements in a spatial-light modulator used in the maskless-lithography process. Furthermore, the computer system generates the write pattern. Note that the write pattern includes features corresponding to at least the subset of elements in the spatial-light modulator, and the generating is in accordance with a characteristic dimension of an element in the spatial-light modulator and a target pattern that is to be printed on a semiconductor wafer during the maskless-lithography process.

Abstract: A method for determining a mask pattern is described. During the method, a first mask pattern that includes a plurality of second regions corresponding to the first regions of the photo-mask is provided. Then, a second mask pattern is determined based on the first mask pattern and differences between a target pattern and an estimate of a wafer pattern that results from the photolithographic process that uses at least a portion of the first mask pattern. Note that the determining includes different treatment for different types of regions in the target pattern, and the second mask pattern and the target pattern include pixilated images.

Abstract: A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.

Abstract: A method for verifying a lithographic process is described. During the method, a set of guard bands are defined around a target pattern that is to be printed on a semiconductor die using a photo-mask in the lithographic process. An estimated pattern is calculated using a model of the lithographic process. This model of the lithographic process includes a mask pattern corresponding to the photo-mask and a model of an optical path. Then, whether or not positions of differences between the estimated pattern and the target pattern exceeded one or more guard bands in the set of guard bands is determined.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern is partitioning into subsets, which are distributed to processors. Then, a set of second mask patterns, each of which corresponds to one of the subsets, is determined. Moreover, at least one of the second set of mask patterns may be determined by: providing a first mask pattern that includes distinct types of regions corresponding to distinct types of regions of the photo-mask, calculating a gradient of a function, and determining a second mask pattern based, at least in part, on the gradient. Note that the function may depend on the first mask pattern and an estimate of a wafer pattern that results from the photolithographic process, and that the gradient may be calculated in accordance with a formula obtained by taking a derivative of the function.

Abstract: Photomask patterns are represented using contours defined by mask functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks. An accurate, slower merit function may be used to determine adjustment parameters for a faster, approximate merit function. The faster merit function may be used for iteration and adjusted based on the adjustment parameters.

Abstract: Photomask patterns are represented using contours defined by mask functions or other formats. Given target pattern, contours may be optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimized patterns or blocks may be simplified for mask manufacturing.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.