Patents by Inventor Daniel S. Green

Daniel S. Green has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chip integration into cavities of a host wafer using lateral dielectric material bonding
    Patent number: 11756848
    Abstract: An electronic assembly has a backside capping layer, a host wafer having a back surface bonded to a top surface of the backside capping layer except for cavities in the wafer formed over areas of the backside capping layer, the cavities having side surfaces of the wafer. Chiplets have backsides bonded directly to at least portion of the areas of the top surface of the backside capping layer. A lateral dielectric material between side surfaces of the chiplets and side surfaces of the wafer, mechano-chemically bonds the side surfaces of the chiplets to the side surfaces of the wafer.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: September 12, 2023
    Assignee: PseudolithIC, Inc.
    Inventors: Florian Herrault, Isaac Rivera, Daniel S. Green, James F. Buckwalter
  • Synergistic combination of IL-4, interferon gamma, and interferon alpha in treating ovarian cancer
    Patent number: 10849960
    Abstract: Methods and compositions are disclosed for treating a subject with a cancer. The compositions can include a chimeric molecule comprising an agent that specifically binds the interleukin 4 receptor (IL-4R) and a toxic moiety, an interferon alpha (IFN?), and an interferon gamma (IFN?). In some non-liming embodiments, the compositions can also include monocytes. The methods disclosed herein include administering a therapeutically effective amount of the compositions taught herein to a subject with cancer, thereby treating the cancer in the subject, wherein cells in the cancer express IL-4R. In some non-liming embodiments, the methods can also include administering monocytes.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: December 1, 2020
    Assignee: The United States of America, as represented by the Secretary, Department of Health and Human Services
    Inventors: Raj K. Puri, Kathryn C. Zoon, Syed R. Husain, Daniel S. Green
  • SYNERGISTIC COMBINATION OF IL4 RECEPTOR TARGETED AGENTS, INTERFERON GAMMA, AND INTERFERON ALPHA FOR USE IN TREATING OVARIAN CANCER
    Publication number: 20200282020
    Abstract: Methods and compositions are disclosed for treating a subject with a cancer. The compositions can include a chimeric molecule comprising an agent that specifically binds the interleukin 4 receptor (IL-4R) and a toxic moiety, an interferon alpha (IFN?), and an interferon gamma (IFN?). In some non-liming embodiments, the compositions can also include monocytes. The methods disclosed herein include administering a therapeutically effective amount of the compositions taught herein to a subject with cancer, thereby treating the cancer in the subject, wherein cells in the cancer express IL-4R. In some non-liming embodiments, the methods can also include administering monocytes.
    Type: Application
    Filed: September 7, 2018
    Publication date: September 10, 2020
    Applicant: The United States of America, as represented by the Secretary, Department of Health and Human Servic
    Inventors: Raj K. Puri, Kathryn C. Zoon, Syed R. Husain, Daniel S. Green
  • Selective oxidation of transition metal nitride layers within compound semiconductor device structures
    Patent number: 10262856
    Abstract: Methods for integrating transition metal oxide (TMO) layers into a compound semiconductor device structure via selective oxidation of transition metal nitride (TMN) layers within the structure.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: April 16, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: David J. Meyer, Brian P. Downey, Daniel S. Green
  • Selective Oxidation of Transition Metal Nitride Layers Within Compound Semiconductor Device Structures
    Publication number: 20180174833
    Abstract: Methods for integrating transition metal oxide (TMO) layers into a compound semiconductor device structure via selective oxidation of transition metal nitride (TMN) layers within the structure.
    Type: Application
    Filed: December 15, 2017
    Publication date: June 21, 2018
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: David J. Meyer, Brian P. Downey, Daniel S. Green