Patents by Inventor Daniel S. Pickard

Daniel S. Pickard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7298091
    Abstract: A compact matching network couples an RF power supply to an RF antenna in a plasma generator. The simple and compact impedance matching network matches the plasma load to the impedance of a coaxial transmission line and the output impedance of an RF amplifier at radio frequencies. The matching network is formed of a resonantly tuned circuit formed of a variable capacitor and an inductor in a series resonance configuration, and a ferrite core transformer coupled to the resonantly tuned circuit. This matching network is compact enough to fit in existing compact focused ion beam systems.
    Type: Grant
    Filed: February 1, 2002
    Date of Patent: November 20, 2007
    Assignee: The Regents of the University of California
    Inventors: Daniel S. Pickard, Ka-Ngo Leung
  • Patent number: 7005795
    Abstract: A semiconductor source of emission electrons which uses a target of a wide bandgap semiconductor having a target thickness measured from an illumination surface to an emission surface. The semiconductor source is equipped with an arrangement for producing and directing a beam of seed electrons at the illumination surface and a mechanism for controlling the energy of the seed electrons such that the energy of the seed electrons is sufficient to generate electron-hole pairs in the target. A fraction of these electron-hole pairs supply the emission electrons. Furthermore, the target thickness and the energy of the seed electrons are optimized such that the emission electrons at the emission surface are substantially thermalized. The emission of electrons is further facilitated by generating negative electron affinity at the emission surface. The source of the invention can take advantage of diamond, AlN, BN, Ga1-yAlyN and (AlN)x(SiC)1-x, wherein 0?y?1 and 0.2?x?1 and other wide bandgap semiconductors.
    Type: Grant
    Filed: November 9, 2001
    Date of Patent: February 28, 2006
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Daniel S. Pickard, R. Fabian W. Pease
  • Publication number: 20030146803
    Abstract: A compact matching network couples an RF power supply to an RF antenna in a plasma generator. The simple and compact impedance matching network matches the plasma load to the impedance of a coaxial transmission line and the output impedance of an RF amplifier at radio frequencies. The matching network is formed of a resonantly tuned circuit formed of a variable capacitor and an inductor in a series resonance configuration, and a ferrite core transformer coupled to the resonantly tuned circuit. This matching network is compact enough to fit in existing compact focused ion beam systems.
    Type: Application
    Filed: February 1, 2002
    Publication date: August 7, 2003
    Inventors: Daniel S. Pickard, Ka-Ngo Leung
  • Publication number: 20030089912
    Abstract: A semiconductor source of emission electrons which uses a target of a wide bandgap semiconductor having a target thickness measured from an illumination surface to an emission surface. The semiconductor source is equipped with an arrangement for producing and directing a beam of seed electrons at the illumination surface and a mechanism for controlling the energy of the seed electrons such that the energy of the seed electrons is sufficient to generate electron-hole pairs in the target. A fraction of these electron-hole pairs supply the emission electrons. Furthermore, the target thickness and the energy of the seed electrons are optimized such that the emission electrons at the emission surface are substantially thermalized. The emission of electrons is further facilitated by generating negative electron affinity at the emission surface. The source of the invention can take advantage of diamond, AlN, BN, Ga1−yAlyN and (AlN)x(SiC)1−x, wherein 0≦y≦1 and 0.
    Type: Application
    Filed: November 9, 2001
    Publication date: May 15, 2003
    Inventors: Daniel S. Pickard, R. Fabian W. Pease