Abstract: A method of ensuring against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents interaction between any fluorine that is released during the refractory material deposition step from interacting with the underlying silicide.

Abstract: A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least at least 25 cm3/min to about 150 cm3/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.

Abstract: A method of forming inter-level contacts or vias between metal layers using a tungsten film deposited into the via using non-collimated sputter deposition. The sputter chamber is configured with a pressure of about 1 mTorr to about 10 mTorr with an inert gas flow of at least at least 25 cm3/min to about 150 cm3/min. Shielding inside the chamber is coated with a material, preferably, aluminum oxide, that promotes adhesion of tungsten to the shielding. An adhesion layer of titanium may be included prior to deposition of the tungsten film. Non-collimated sputter deposition increases the target to substrate distance inside the sputter chamber; reduces the heating effect associated with traditional collimated sputtering; and provides more robust diffusion barriers.