Abstract: Apparatus and methods for high voltage tolerant bootstrap switches are disclosed. In certain embodiments, an integrated circuit (IC) includes an input node that receives an input voltage, an output node, and a switch connected between the input node and the output node. The switch includes a first field-effect transistor (FET) and a second FET electrically connected in series between the input node and the output node. The switch is configurable between an OFF state in which a gate of the first FET is controlled with a first voltage and a gate of the second FET is controlled with a second voltage, and an ON state in which the gates of the first FET and the second FET are controlled with a voltage that tracks the input voltage.

Abstract: Apparatus and methods for high voltage tolerant bootstrap switches are disclosed. In certain embodiments, an integrated circuit (IC) includes an input node that receives an input voltage, an output node, and a switch connected between the input node and the output node. The switch includes a first field-effect transistor (FET) and a second FET electrically connected in series between the input node and the output node. The switch is configurable between an OFF state in which a gate of the first FET is controlled with a first voltage and a gate of the second FET is controlled with a second voltage, and an ON state in which the gates of the first FET and the second FET are controlled with a voltage that tracks the input voltage.

Abstract: A method is described and in one embodiment includes detecting a transition of a data signal comprising a data packet received at a circuit while the circuit is in a first hysteresis mode; placing the circuit in a second hysteresis mode subsequent to the detecting; and returning the receiver to the first hysteresis mode subsequent to completion of receipt of the data packet to await receipt of a next data packet. In certain embodiments, the first hysteresis mode is a high hysteresis mode and the second hysteresis mode is a standard hysteresis mode. In some embodiments, a level of each of the first and second hysteresis modes is dynamically tunable.