Abstract: Multilayer floating gate field-effect transistor (FET) devices and related methods are provided. A multilayer floating gate FET device can include a first floating gate separated via a first dielectric layer from a channel of the device and a second floating gate separated via a second dielectric layer from the first floating gate. The second dielectric layer between the first floating gate and the second floating gate permits a redistribution of charge between the first and second floating gates from one of the floating gates to the other when under the influence of a first electrical field from a first voltage. In some embodiments, a redistribution of charge between the first and second floating gates with electrons being supplied through a channel to the first and second floating gates can occur when under the influence of a second electrical field from a second voltage that is greater than the first voltage.