Abstract: Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a first set of nanosheets and a second set of nanosheets on top of the first set of nanosheets, wherein the first set of nanosheets has an uppermost nanosheet and the second set of nanosheets has a lowermost nanosheet, the lowermost nanosheet being separated from the uppermost nanosheet by a first gap; forming a conformal liner covering the first set of nanosheets and the first gap; covering a first portion of the conformal liner at the first gap with a protective stud; selectively removing a second portion of the conformal liner from end surfaces of the first set of nanosheets; and forming source/drain at the end surfaces of the first set of nanosheets. A structure formed thereby is also provided.

Abstract: The invention also relates to a process for synthesizing an ester-containing benzoxazine monomer of formula (1) comprising the following steps consisting of: c) reacting a phenolic acid derivative of formula (II), comprising at least one R*** group on the phenolic ring: wherein x is of from 0 to 1, and y=1-x, with a polyfunctional molecule or oligomer of formula (III) at a temperature of from 25° C. to 200° C., during 1 h-72 h, in the presence of a catalyst of Bronsted acid type, resulting in a phenol terminated oligomer or molecule (compound (IV)), and reacting the compound (IV) with a mixture of: an amino-alcohol of formula (V): a primary amine derivative of formula (VI), R**—NH2??(VI), and paraformaldehyde of formula (VII) at a temperature range of from 80° C. to 100° C.

Abstract: A helical screw conveyor unit, worm shaft, worm extruder and method for providing a worm shaft, wherein the helical screw conveyor unit is an exchangeable element for a helicoidally or spirally winding helix of a worm shaft, having a main body with a helicoidally winding helix element, wherein the helical screw conveyor unit is serviced with little outlay on servicing, the top side of the lateral surface is concavely curved in shell-like form about the longitudinal axis, and the main body has a radial opening for the leadthrough of a fastening region of a worm shaft shank, the helix element has at most one half of one helix turn, the the main body lateral surface has an inner surface for being seated on the fastening region, and the helical screw conveyor unit has at least one fastening element for detachably fastening the main body to the fastening region.

Abstract: A method, a system, and a non-transitory computer readable medium for measuring a local critical dimension uniformity of an array of two-dimensional structural elements, the method may include obtaining an acquired optical spectrometry spectrum of the array; feeding the acquired optical spectrometry spectrum of the array to a trained machine learning process, wherein the trained machine learning process is trained to map an optical spectrometry spectrum to an average critical dimension (CD) and a local critical dimension uniformity (LCDU); and outputting, by the trained machine learning process, the average CD and the LCDU of the array.

Abstract: A microelectronic structure including a nanosheet transistor that includes a source/drain. A frontside contact that includes a first section located on the frontside of the source/drain and a via section that extends to the backside of the nanosheet transistor. A shallow isolation layer located around a portion of the via section the first frontside contact. A backside metal line located on a backside surface of the via section and located on a backside surface of the shallow trench isolation layer. A dielectric liner located along a sidewall of the backside metal line and located along a bottom surface of the backside metal line.

Abstract: A hemodialysis system including one or more ultraviolet chambers is disclosed. The hemodialysis system including a dialyzer arranged and configured to filter a patient's blood, a hemodialysis machine arranged and configured to pump, move, or the like dialysate through the dialyzer, the hemodialysis machine including an outlet valve and an outlet fluid flow path to pump or move dialysate from the hemodialysis machine to the dialyzer, and an inlet valve and an inlet fluid flow path to pump or receive dialysate from the dialyzer, and one or more ultraviolet chambers arranged and configured to kill bacteria, viruses, or a combination thereof. Thus arranged, by incorporating one or more ultraviolet chambers in strategic areas of the system, the ultraviolet chambers may eliminate, or at least greatly reduce, the possibility of cross-contamination in, for example, the dialysate, and thus eliminate the need for disinfecting the system between treatments.

Abstract: A photographic lithography method for printing chip sections of a mask to a wafer is provided. The method includes generating the mask including a pattern of rows of the chip sections, each alternating row including half-fields mirrored with respect to corresponding half-fields of an adjacent row, exposing every other row of half-fields with the pattern and the wafer in a first relative orientation based on mirroring of the half-fields and the corresponding half-fields, re-orienting the pattern and the wafer to have a second relative orientation opposite the first relative orientation and exposing remaining rows of the half-fields with the pattern and the wafer in the second relative orientation.

Abstract: Embodiments are disclosed for a sensing device and a method for fabrication. The sensing device includes a substrate and an array of ordered nanotrees in contact with the substrate. The array of ordered nanotrees includes multiple trunk sections having multiple predetermined trunk thicknesses, and multiple branches. The branches include multiple predetermined widths in two dimensions. Additionally, the branches include multiple predetermined branch thicknesses. Further, the array of ordered nanotrees is configured to perform a sensing application based on an interaction between a sensing source and the array of ordered nanotrees. Additionally, the array of ordered nanotrees includes multiple predetermined distances between branches of neighboring ordered nanotrees.

Abstract: A semiconductor device includes one or more lower transistors and includes one or more upper transistors. The upper transistor(s) may be forksheet transistors or cells separated by a forksheet pillar. The upper transistor(s) are stacked vertically above respective lower transistor(s). The device width of the upper transistor(s) is relatively small compared to the device width of the lower transistor. As such, adequate space exists for both a lower source/drain (S/D) contact and an upper S/D contact to exist in a same YY cross sectional plane. The lower S/D contact may bypass the upper transistor and contact the underlying lower S/D region there below.

Abstract: A sensor device for acquiring filling level information describing the filling level of a medium in a container includes a housing means and a sensor means for acquiring filling level information describing the filling level of a medium in a container, wherein the housing means includes a fastening region for fastening the sensor means, which region includes a first fastening portion for forming a threaded connection with a corresponding first fastening portion of the sensor means, and a second fastening portion separate from the first fastening portion for forming a press-fit connection, in particular a cone press-fit connection, with a corresponding second fastening portion of the sensor means; and/or the sensor means includes a fastening region for fastening the housing means, which region comprises a first fastening portion for forming a threaded connection with a corresponding first fastening portion of the housing means, and a second fastening portion separate from the first fastening portion for formin

Abstract: A hybrid semiconductor structure, a system, and a method of forming a hybrid semiconductor structure. The hybrid semiconductor structure may include a PFET region, where the PFET region includes a first channel in a fin shape; an NFET region, where the NFET region includes a second channel, the second channel including a nanosheet; and an isolation bar separating the PFET region from the NFET region. The system may include a hybrid semiconductor structure including a PFET region; an NFET region; an isolation bar separating the PFET and NFET region; and a gate surrounding a plurality of sidewalls of the first channel and the second channel. The method may include forming an isolation bar between a first channel material in an NFET region and a second channel material in a PFET region; forming the second channel material into a fin shape; and forming the first channel material into stacked nanosheets.

Abstract: A computer-implemented method of using a control module to control a lithographic apparatus includes pre-calculating, using a processor, a library of pupil images for a measuring spot of an object-under-test, wherein each pupil image represents a simulated structure of the object-under-test at the measuring spot given a particular set of configuration values and a particular probing wavelength used for testing the object-under-test using scatterometry. The method further includes, in response to receiving a real-time pupil image when testing the object-under-test using scatterometry, comparing, using the processor, the real-time pupil image with the library of pupil images to identify a best match from the library. The method further includes outputting a set of configuration values associated with the best match from the library.

Abstract: A semiconductor structure includes a lattice matched etch stop layer disposed on a silicon substrate layer. The lattice matched etch stop layer is lattice matched to the silicon substrate layer. The semiconductor structure further includes an epitaxial silicon layer disposed on the lattice matched etch stop layer, a front-end-of-the-line device layer disposed on the epitaxial silicon layer, a back-end-of-the-line device layer disposed on the front-end-of-the-line device layer, and a carrier wafer disposed on the back-end-of-the-line device layer.

Abstract: Embodiments are disclosed for a method for fabricating a semiconductor device. The method includes forming a recess under a region for a source/drain (S/D). The method further includes depositing a sacrificial placeholder liner conformally. Additionally, the method includes performing a sacrificial material overfill. Further, the method includes performing an etch back of the sacrificial material overfill. Also, the method includes performing S/D epitaxial (epi) growth over a remaining placeholder sacrificial liner to generate an S/D epi for the S/D.

Abstract: A multi-level rotor for a coolant flow control valve assembly, which accommodates an increased number of inlet ports, outlet ports, and flow channels using a single rotor located in a housing, enabling a larger number of flow configurations. The housing includes nine ports which may function as an inlet or an outlet, which facilitates different flow configurations. For a thermal management system, reduced cost and less space utilization is achieved by a reduced number of valves, where the multi-level rotor is able to fluidically connect multiple inlets/outlets. This enables different flow configurations, depending on the degree of rotation. The channels at different levels are sealed from each other within the housing. The flow channels are manufactured into a single entity, therefore always having the same positional accuracy relative to each other when the rotor is repositioned.

Abstract: A stacked field effect transistor (stacked-FET) device includes a first layer comprising at least one first layer transistor structure comprising a plurality of first layer terminals, a diffusion break dielectric fill region adjacent to one of the first layer terminals, a second layer overlying and adjacent to the first layer and comprising at least one second layer transistor structure comprising a plurality of second layer terminals, and a contact wiring between the first layer and the second layer passing through the diffusion break dielectric fill region of the first layer and connecting with one of the second layer terminals.

Abstract: A semiconductor device that includes a stack of sheet semiconductor layers, and source and drain regions positioned on opposing sides of a channel region in the stack of sheet semiconductor layers. A first contact is present to an upper sheet portion of the source and drain regions for the stack of sheet semiconductor layers. An extended epitaxial semiconductor region is present in contact with the lower sheet portion of the source/drain regions for the stack of sheet semiconductor layers. A second contact is present in direct contact with an upper surface of the extended epitaxial semiconductor region. A notch may be present in the upper surface of the extended semiconductor region to increase contact surface to the second contact.

Abstract: A semiconductor device includes a wafer having at least two source/drain (S/D) epi regions. A power rail is arranged on a backside of the wafer. A backside contact (BSCA) has a first portion including a backside local interconnect configured to connect the S/D epi regions together. A plurality of frontside signal wires are connected to the backside local interconnect through a first front side contact.

Abstract: A semiconductor device includes a nanosheet stack on a substrate. A first source/drain is on a first side of the nanosheet stack and a second source/drain is on an opposing side of the nanosheet stack. A backside contact includes a first contact end on a first end of the first source/drain and an opposing second contact end in electrical communication with a backside power distribution network. A frontside contact includes a first contact end on a first end of the second source/drain and an opposing second contact end in electrical communication with a backend of line (BEOL) interconnect. A placeholder extends from an opposing second end of the second source/drain.