Abstract: A semiconductor device includes one or more lower transistors and includes one or more upper transistors. The upper transistor(s) may be forksheet transistors or cells separated by a forksheet pillar. The upper transistor(s) are stacked vertically above respective lower transistor(s). The device width of the upper transistor(s) is relatively small compared to the device width of the lower transistor. As such, adequate space exists for both a lower source/drain (S/D) contact and an upper S/D contact to exist in a same YY cross sectional plane. The lower S/D contact may bypass the upper transistor and contact the underlying lower S/D region there below.

Abstract: A hybrid semiconductor structure, a system, and a method of forming a hybrid semiconductor structure. The hybrid semiconductor structure may include a PFET region, where the PFET region includes a first channel in a fin shape; an NFET region, where the NFET region includes a second channel, the second channel including a nanosheet; and an isolation bar separating the PFET region from the NFET region. The system may include a hybrid semiconductor structure including a PFET region; an NFET region; an isolation bar separating the PFET and NFET region; and a gate surrounding a plurality of sidewalls of the first channel and the second channel. The method may include forming an isolation bar between a first channel material in an NFET region and a second channel material in a PFET region; forming the second channel material into a fin shape; and forming the first channel material into stacked nanosheets.

Abstract: A resource management system (39) manages a supply of resource material and/or resource items to a plurality of at least two additive manufacturing machines (3) for additive manufacturing. The resource management system (39) includes a control unit (41) that is configured to receive a signal indicative of a demand for resource material and/or resource items of any of the additive manufacturing machines (3). The control unit (41) is configured to schedule the supply of demanded resource material and/or resource items according to a predetermined prioritization scheme for resolving demand conflicts.

Abstract: A valve is provided having a valve body (2), a shut-off diaphragm (6), a cap (10) attached to the shut-off diaphragm, a plurality of fastening elements (16) fastened to the cap (10), each having a head (40), and at least one locking element (15). The at least one locking element is held captive on the valve body, able to move between an unlocked position in which it allows the passage of the head of the corresponding fastening elements and a locked position in which it engages beneath the head of the fastening elements to allow the fastening of the cap (10) on the valve body (2) by tightening of the one or more fastening elements (16).

Abstract: A semiconductor structure includes a gate cut isolation region composed of a top portion and a bottom portion. The top portion of the gate cut isolation region being at a first taper angle and the second portion being at a second taper angle different from the first taper angle. A change from the first taper angle to the second taper angle occurs at an intersection between the top portion of the gate cut isolation region and the bottom portion of the gate cut isolation region. The semiconductor structure further includes a plurality of semiconductor channel layers adjacent to the gate cut isolation region, the plurality of semiconductor channel layers being surrounded by a metal gate stack. A top surface of an uppermost semiconductor channel layer being coplanar with the intersection between the top portion and the bottom portion of the gate cut isolation region.

Abstract: A microelectronic structure including a nanosheet transistor that includes a source/drain. A frontside contact that includes a first section located on the frontside of the source/drain and a via section that extends to the backside of the nanosheet transistor. A shallow isolation layer located around a portion of the via section the first frontside contact. A backside metal line located on a backside surface of the via section and located on a backside surface of the shallow trench isolation layer. A dielectric liner located along a sidewall of the backside metal line and located along a bottom surface of the backside metal line.

Abstract: Backside contacts wrapping around source/drain regions provide increased contact areas for electrical connections between field-effect transistors and metallization layers. Cavities formed within a device layer expose sidewalls of selected source/drain regions. The backside contacts extend within such cavities and adjoin the sidewall surfaces and bottom surfaces of the selected source/drain regions.

Abstract: An adapter (1) for establishes a flow channel (2) between a breathing gas supply and a patient connection piece. A set (20) and a system (30) for ventilation or respiratory support, each include the adapter (1). The adapter (1) includes a first connection structure (3) configured to connect to the breathing gas supply and a second connection structure (4) configured to connect to a patient connection piece. A bypass channel (5) branches off from the flow channel (2) and is provided with an extraction opening (7) which can be closed at least temporarily by a safety valve (6). The safety valve (6) is configured such that the extraction opening (7) is closed when a ventilation pressure prevailing in the flow channel (2) is lower than a pressure prevailing on a side of the safety valve facing away from the flow channel (2).

Abstract: Embodiments are disclosed for a method for fabricating a semiconductor device. The method includes forming a recess under a region for a source/drain (S/D). The method further includes depositing a sacrificial placeholder liner conformally. Additionally, the method includes performing a sacrificial material overfill. Further, the method includes performing an etch back of the sacrificial material overfill. Also, the method includes performing S/D epitaxial (epi) growth over a remaining placeholder sacrificial liner to generate an S/D epi for the S/D.

Abstract: Apparatus and associated methods relate to presenting for selection, services comprising at least one bundled set of healthcare services to be performed separately by respective providers, determining a bundle price for the at least one bundled set of healthcare services and in response to receiving payment in an amount of the bundle price, generating a persistent purchase data record with a unique confirmation number that is selectively redeemable by the user to receive each of the healthcare services in the bundled set. The bundle price may be discounted and/or based on the location or time at which at least one service will be performed. The bundle price may also be based on the user's remaining health insurance deductible. A single payment may be disbursed to multiple providers of the bundled set of healthcare services. The received and/or disbursed payment may be in virtual funds.

Abstract: A semiconductor device includes a nanosheet stack on a substrate. A first source/drain is on a first side of the nanosheet stack and a second source/drain is on an opposing side of the nanosheet stack. A backside contact includes a first contact end on a first end of the first source/drain and an opposing second contact end in electrical communication with a backside power distribution network. A frontside contact includes a first contact end on a first end of the second source/drain and an opposing second contact end in electrical communication with a backend of line (BEOL) interconnect. A placeholder extends from an opposing second end of the second source/drain.

Abstract: A method of characterizing asymmetric depositions on a target is provided. The method includes forming at least four asymmetrical petals in a layer on a substrate, and depositing a light-absorbing material on the at least four asymmetrical petals, wherein the light-absorbing material deposits unevenly on a plurality of walls of the at least four asymmetrical petals. The method further includes determining a pattern shift response (PSR) from the light-absorbing material on each of the walls of the at least four asymmetrical petals, and converting the pattern shift response (PSR) to an asymmetry of thicknesses of the light-absorbing material deposited on facing walls of the at least four asymmetrical petals. The method further includes correcting an overlay petal position based on the asymmetry of thicknesses.

Abstract: A stacked field effect transistor (stacked-FET) device includes a first layer comprising at least one first layer transistor structure comprising a plurality of first layer terminals, a diffusion break dielectric fill region adjacent to one of the first layer terminals, a second layer overlying and adjacent to the first layer and comprising at least one second layer transistor structure comprising a plurality of second layer terminals, and a contact wiring between the first layer and the second layer passing through the diffusion break dielectric fill region of the first layer and connecting with one of the second layer terminals.

Abstract: A microelectronic structure that includes a nanosheet transistor. The nanosheet transistor includes a source epi and a drain epi. A first inner spacer located adjacent to the source epi, where the first inner spacer has a first width as measured perpendicular to a gate direction. A second inner spacer located adjacent to the drain epi. The second inner spacer has second width as measured perpendicular to the gate direction. The first width and the second width are different.

Abstract: Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a first set of nanosheets and a second set of nanosheets on top of the first set of nanosheets, wherein the first set of nanosheets has an uppermost nanosheet and the second set of nanosheets has a lowermost nanosheet, the lowermost nanosheet being separated from the uppermost nanosheet by a first gap; forming a conformal liner covering the first set of nanosheets and the first gap; covering a first portion of the conformal liner at the first gap with a protective stud; selectively removing a second portion of the conformal liner from end surfaces of the first set of nanosheets; and forming source/drain at the end surfaces of the first set of nanosheets. A structure formed thereby is also provided.

Abstract: A helical screw conveyor unit, worm shaft, worm extruder and method for providing a worm shaft, wherein the helical screw conveyor unit is an exchangeable element for a helicoidally or spirally winding helix of a worm shaft, having a main body with a helicoidally winding helix element, wherein the helical screw conveyor unit is serviced with little outlay on servicing, the top side of the lateral surface is concavely curved in shell-like form about the longitudinal axis, and the main body has a radial opening for the leadthrough of a fastening region of a worm shaft shank, the helix element has at most one half of one helix turn, the the main body lateral surface has an inner surface for being seated on the fastening region, and the helical screw conveyor unit has at least one fastening element for detachably fastening the main body to the fastening region.

Abstract: The invention also relates to a process for synthesizing an ester-containing benzoxazine monomer of formula (1) comprising the following steps consisting of: c) reacting a phenolic acid derivative of formula (II), comprising at least one R*** group on the phenolic ring: wherein x is of from 0 to 1, and y=1-x, with a polyfunctional molecule or oligomer of formula (III) at a temperature of from 25° C. to 200° C., during 1 h-72 h, in the presence of a catalyst of Bronsted acid type, resulting in a phenol terminated oligomer or molecule (compound (IV)), and reacting the compound (IV) with a mixture of: an amino-alcohol of formula (V): a primary amine derivative of formula (VI), R**—NH2??(VI), and paraformaldehyde of formula (VII) at a temperature range of from 80° C. to 100° C.

Abstract: A method, a system, and a non-transitory computer readable medium for measuring a local critical dimension uniformity of an array of two-dimensional structural elements, the method may include obtaining an acquired optical spectrometry spectrum of the array; feeding the acquired optical spectrometry spectrum of the array to a trained machine learning process, wherein the trained machine learning process is trained to map an optical spectrometry spectrum to an average critical dimension (CD) and a local critical dimension uniformity (LCDU); and outputting, by the trained machine learning process, the average CD and the LCDU of the array.

Abstract: A microelectronic structure including a nanosheet transistor that includes a source/drain. A frontside contact that includes a first section located on the frontside of the source/drain and a via section that extends to the backside of the nanosheet transistor. A shallow isolation layer located around a portion of the via section the first frontside contact. A backside metal line located on a backside surface of the via section and located on a backside surface of the shallow trench isolation layer. A dielectric liner located along a sidewall of the backside metal line and located along a bottom surface of the backside metal line.

Abstract: A hemodialysis system including one or more ultraviolet chambers is disclosed. The hemodialysis system including a dialyzer arranged and configured to filter a patient's blood, a hemodialysis machine arranged and configured to pump, move, or the like dialysate through the dialyzer, the hemodialysis machine including an outlet valve and an outlet fluid flow path to pump or move dialysate from the hemodialysis machine to the dialyzer, and an inlet valve and an inlet fluid flow path to pump or receive dialysate from the dialyzer, and one or more ultraviolet chambers arranged and configured to kill bacteria, viruses, or a combination thereof. Thus arranged, by incorporating one or more ultraviolet chambers in strategic areas of the system, the ultraviolet chambers may eliminate, or at least greatly reduce, the possibility of cross-contamination in, for example, the dialysate, and thus eliminate the need for disinfecting the system between treatments.