Abstract: A metal-ceramic substrate which has a highly stable bond between the metal layer and the ceramic body, and also high thermal conductivity and electrical conductivity. The metal-ceramic substrate comprises (a) a ceramic body, (b) a metal layer, and (c) a bonding layer located between the ceramic body and the metal layer. The bonding layer comprises (i) a metal M1 having a melting point of at least 700° C., (ii) a metal M2 having a melting point of less than 700° C., (iii) a metal M3 selected from the group of active metals, and (iv) a metal M4 selected from the group consisting of bismuth, gallium, zinc, indium, germanium, aluminum and magnesium. The bonding layer has the following characteristics: (c1) M(M2)EDX=10-20 weight percent, (c2) 15 weight percent?[M(M4)/M(M2)]ICP*1000 weight percent+M(M2)EDX?100 weight percent and (c3) M(Ag)EDX<10 weight percent.

Abstract: The invention relates to a metal-ceramic substrate, to an electronic component comprising a metal-ceramic substrate, and to a method for producing a metal-ceramic substrate. The metal-ceramic substrate comprises: a) a ceramic body which has a main extension plane, b) a metal layer which is connected to the ceramic body in a planar manner, the metal layer having a structuring region which comprises (i) partially solid material and (ii) partially non-solid material, and c) a contact area which is arranged on the metal layer and comprises silver, the structuring region having a geometry in a cross-section through the metal-ceramic substrate perpendicular to the main extension plane, the following requirement being met: S(BCsolid)/S(BCtotal)>60%, wherein: S(BCtotal) represents the total length of the line between points B and C, and S(BCsolid) represents the length of the line between points B and C that intersects the solid material.

Abstract: A metal-ceramic substrate and an electronic component comprising a metal-ceramic substrate. The metal-ceramic substrate comprises: a) a ceramic body which has a main extension plane, b) a metal layer which is connected to the ceramic body, in a planar manner, the metal layer having a structuring region which comprises: (i) solid material in some areas and (ii) non-solid material in some areas, and c) a contact region comprising silver arranged on the metal layer, wherein, in a cross section through the metal-ceramic substrate perpendicular to the main extension plane, the structuring region has a geometry in which the following requirement is met: A ? ( BCD solid ) / A ? ( BCD total ) > 70 ? % , wherein A (BCDtotal) represents the total area of the triangle described by the points B, C and D, and A (BCDsolid) represents the area of the triangle described by the points B, C and D which is occupied by solid material.

Abstract: A method for structuring a metal-ceramic composite, comprising the following steps: providing a metal-ceramic composite containing a nitride ceramic substrate comprising a front side and a rear side, a metal coating on the front side of the nitride ceramic substrate, a reaction layer which is present between the metal coating and the ceramic substrate and contains one or more elements ERS selected from Ti, Hf, Zr, Nb, V, Ta, and Ce, removing the metal coating so that at least one recess is created in the metal coating and an exposed adhesion-promoting layer is present in the recess, removing the exposed reaction layer using a pulsed laser beam of an ultrashort pulse laser so that an exposed surface of the ceramic substrate is present in the recess, wherein the pulsed laser beam applies a total fluence of 50 J/cm2 to 650 J/cm2.

Abstract: A metal-ceramic composite containing a ceramic substrate comprising a front side and a rear side and containing ?-silicon nitride, and a metal coating on the front side of the ceramic substrate, wherein the metal coating comprises at least one recess, and a surface of the ceramic substrate is exposed by the recess.

Abstract: A metal-ceramic composite containing a ceramic substrate comprising a front side and a rear side and containing a silicon nitride, a metal coating present on the front side of the ceramic substrate, wherein the metal coating comprises at least one recess, and a surface of the ceramic substrate is exposed by the recess, wherein the surface of the ceramic substrate exposed by the recess has a stretched surface area ratio Sdr in accordance with the standard ILNAS-EN ISO 25178-2:2022 of at least 7.0%, wherein Sdr is determined by confocal microscopy.

Abstract: A metal-ceramic substrate which has a highly stable bond between the metal layer and the ceramic body, and also high thermal conductivity and electrical conductivity. The metal-ceramic substrate comprises (a) a ceramic body, (b) a metal layer, and (c) a bonding layer located between the ceramic body and the metal layer. The bonding layer comprises (i) a metal M1 having a melting point of at least 700° C., (ii) a metal M2 having a melting point of less than 700° C., (iii) a metal M3 selected from the group of active metals, and (iv) a metal M4 selected from the group consisting of bismuth, gallium, zinc, indium, germanium, aluminum and magnesium. The bonding layer has the following characteristics: (c1) M(M2)EDX=10-20 weight percent, (c2) 15 weight percent?[M(M4)/M(M2)]ICP*1000 weight percent+M(M2)EDX?100 weight percent and (c3) M(Ag)EDX<10 weight percent.

Abstract: The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

Abstract: The invention relates to a method for structuring metal-ceramic substrates and to a structured metal-ceramic substrate which can be used in particular in power electronics. In the method, a first metal-ceramic substrate and a second metal-ceramic substrate are etched, wherein, while being contacted with an etching solution that is capable of removing active metal from the bonding layer of the metal-ceramic substrates, the first metal-ceramic substrate and the second metal-ceramic substrate are positioned such that an orthogonal projection of the first metal-ceramic substrate onto a projection plane parallel to the metal layer of the first metal-ceramic substrate shades no more than 60% of the metal layer of the second metal-ceramic substrate.

Abstract: The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.

Abstract: The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

Abstract: The present invention relates to new brazing alloys containing copper, silver, zinc, manganese, and indium, and a method for their production and their use.