Abstract: A method of protecting freight in a cargo area of a freight carrier may include providing a first and second pallet in the cargo area adjacent to and spaced from each other, each pallet having a top surface supporting cargo and four side walls extending from the top surface in a direction away from the cargo; and providing pallet dunnage in the space between the first and second pallet such that the pallet dunnage contacts respective opposing side walls of the first and second pallet.

Abstract: Substrate-less electrostatic discharge (ESD) integrated circuit structures, and methods of fabricating substrate-less electrostatic discharge (ESD) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin and a second fin protruding from a semiconductor pedestal. An N-type region is in the first and second fins. A P-type region is in the semiconductor pedestal. A P/N junction is between the N-type region and the P-type region, the P/N junction on or in the semiconductor pedestal.

Abstract: A method of protecting freight in a cargo area of a freight carrier may include providing a first and second pallet in the cargo area adjacent to and spaced from each other, each pallet having a top surface supporting cargo and four side walls extending from the top surface in a direction away from the cargo; and providing pallet dunnage in the space between the first and second pallet such that the pallet dunnage contacts respective opposing side walls of the first and second pallet.

Abstract: Substrate-less electrostatic discharge (ESD) integrated circuit structures, and methods of fabricating substrate-less electrostatic discharge (ESD) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin and a second fin protruding from a semiconductor pedestal. An N-type region is in the first and second fins. A P-type region is in the semiconductor pedestal. A P/N junction is between the N-type region and the P-type region, the P/N junction on or in the semiconductor pedestal.

Abstract: A spacer is used in a damaged bone to provide a contact surface that complements the shape of a cooperating bone so a corrective arthrodesis may be performed across the two bones. The spacer further may restore the length and, preferably, the shape of the damaged bone, particularly when a discrete bone segment has been removed. The spacer has a base having the length and shape of the removed bone segment, and a stem attached to the base for securing the spacer to the damaged bone. The spacer may have one or more fixation channels for receiving fixation devices, such as k-wires or bone pins. In a method of using the spacer, gradual osteotomies are performed on the damaged bone until bleeding bone is obtained. A stem hole is drilled to receive the stem, and the spacer is inserted and aligned with the damaged and cooperating bones.