Abstract: A device including a gate driver stage, a decoupling circuit, and a semiconductor switch. The semiconductor switch has at least a first semiconductor transistor and a second semiconductor transistor. The first semiconductor transistor and the second semiconductor transistor are connected in parallel to one another. The decoupling circuit is electrically connected on the input side to an output of the gate driver stage and on the output side to the semiconductor switch. The decoupling circuit has a first decoupling path and a second decoupling path. The first decoupling path is electrically connected to a first gate terminal of the first semiconductor transistor and the second decoupling path is electrically connected to a second gate terminal of the second semiconductor transistor. The first decoupling path and the second decoupling path are connected in parallel to one another, and are constructed identically.

Abstract: A power semiconductor module. The power semiconductor module includes a circuit carrier and at least one semiconductor switch, in particular a semiconductor switch half-bridge, connected to the circuit carrier. The circuit carrier includes an electrically insulating layer, in particular a ceramic layer, and two electrically conductive layers which are separated from one another by an insulating region, in particular an insulating trench, and are both connected to the electrically insulating layer. The electrically conductive layers are both electrically connected to a switching path connection of the semiconductor switch. The power semiconductor module includes at least one metal shaped body, which is connected to the electrically conductive layer and configured to melt when the predetermined temperature is exceeded, to overcome the insulating region, and to connect the electrically conductive layers separated from one another by the insulating region electrically, in particular low-ohmically.

Abstract: The invention relates to a method for operating an electric drive system (1) comprising power electronics (2), in particular an electric current converter, and comprising an electric machine (3) which can be controlled by the power electronics (2), wherein: the drive system (1) can be operated at least in one working mode and in a freewheeling mode as operating modes; the power electronics (2) have at least three electrical phases for controlling the electric machine (3); at least one current value of an electric current of one of the phases is monitored; the current value is compared to a predefined threshold value; and an active short circuit is activated as a safe operating state of the power electronics (2) if the current value exceeds the threshold value.

Abstract: The invention relates to a circuit arrangement (200) for controlling a plurality of semiconductor switches connected in parallel, having an activation connection (213) and a deactivation connection (214), and having a plurality of control connections (220), each provided for connection to a control connection (123) of one of the plurality of semiconductor switches, wherein the activation connection (213) and the deactivation connection (214) are each connected to each of the plurality of control connections (220), and wherein a circuit breaker (230) is provided between the activation connection (213) and at least one of the control connections (220), furthermore having at least one detection and control arrangement which is designed to detect a current flow in the at least one of the control connections (220) and, if a short-circuit is detected on the basis of the current flow, to control the circuit breaker (230) to open.

Abstract: The present invention relates to a method for short-circuit detection by saturation detection in power semiconductor switches and to a corresponding device. A reference voltage (Uref) is provided as a function of a supply voltage (UVDD) of a power semiconductor switch. A differential voltage (Udiff) is generated from the difference of a voltage drop (U?) of a load path of the power semiconductor switch and the provided reference voltage (Uref). The generated differential voltage (Udiff) is compared with a predetermined threshold voltage (Ulim). A short-circuit current in the load path of the power semiconductor switch is detected when the differential voltage (Udiff) exceeds the threshold voltage (Ulim). In this case, the power semiconductor switch is opened.

Abstract: The invention relates to a circuit arrangement (200) for controlling a plurality of semiconductor switches connected in parallel, having an activation connection (213) and a deactivation connection (214), and having a plurality of control connections (220), each provided for connection to a control connection (123) of one of the plurality of semiconductor switches, wherein the activation connection (213) and the deactivation connection (214) are each connected to each of the plurality of control connections (220), and wherein a circuit breaker (230) is provided between the activation connection (213) and at least one of the control connections (220), furthermore having at least one detection and control arrangement which is designed to detect a current flow in the at least one of the control connections (220) and, if a short-circuit is detected on the basis of the current flow, to control the circuit breaker (230) to open.

Abstract: The present invention relates to a method for short-circuit detection by saturation detection in power semiconductor switches and to a corresponding device. A reference voltage (Uref) is provided as a function of a supply voltage (UVDD) of a power semiconductor switch. A differential voltage (Udiff) is generated from the difference of a voltage drop (U?) of a load path of the power semiconductor switch and the provided reference voltage (Uref). The generated differential voltage (Udiff) is compared with a predetermined threshold voltage (Ulim). A short-circuit current in the load path of the power semiconductor switch is detected when the differential voltage (Udiff) exceeds the threshold voltage (Ulim). In this case, the power semiconductor switch is opened.