Abstract: The present disclosure provides a neutron generation target containing a neutron generation region, a highly thermoconductive base plate substrate, and an intermediate layer positioned between the neutron generation region and the substrate to facilitate heat transfer and/or avoid deposition of hydrogen in the substrate. One example of the intermediate layer is highly oriented pyrolytic graphite.

Abstract: Neutron generation targets and methods for manufacturing neutron generation targets, e.g., for using in boron neutron capture therapy. One method includes pressing lithium foil to substrate with enough force, such that lithium deforms during the pressing operation and adheres to the substrate, thereby forming a thin lithium layer on the surface of the substrate.

Abstract: A magnetically polarized photonic device is provided. The magnetically polarized photonic device (100) includes substrate (102), an annihilation layer (106) and a graded band gap layer (142). The annihilation layer (106) is deposed on a surface (104) of substrate (102) with graded band gap layer (142) disposed on annihilation layer (106). Contacts (116, 128) are disposed on ends (146, 150) of magnetically polarized photonic device (100). A magnetic field (159) is applied to graded band gap layer (142) and annihilation layer (106) to drive charges to contacts (116, 128).

Abstract: A magnetically polarized photonic device is provided. The magnetically polarized photonic device (100) includes substrate (102), an annihilation layer (106) and a graded band gap layer (142). The annihilation layer (106) is deposed on a surface (104) of substrate (102) with graded band gap layer (142) disposed on annihilation layer (106). Contacts (116, 128) are disposed on ends (146, 150) of magnetically polarized photonic device (100). A magnetic field (159) is applied to graded band gap layer (142) and annihilation layer (106) to drive charges to contacts (116, 128).

Abstract: A method of etching a layer of electrical insulating material including a layer of strontium titanate on a surface of a semiconductor substrate. The layer of strontium titanate is immersed in a passivated etching solution including an acid and HF and focused light is directed onto the surface of the layer of strontium titanate at areas to be etched, so as to depassivate the passivated surface and to etch the layer of strontium titanate only at the surface receiving collimated light. In a preferred embodiment, the passivated etching solution includes HCl and less than 1000 ppm of HF.