Patents by Inventor Daniel Scott Vanslette

Daniel Scott Vanslette has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for controlling wafer curvature
    Patent number: 8918988
    Abstract: Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediately lower layer. The structure includes integrated circuits having compensating stressed film layers.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: December 30, 2014
    Assignee: International Business Machines Corporation
    Inventors: Mohammed Fazil Fayaz, Jeffery Burton Maxson, Anthony Kendall Stamper, Daniel Scott Vanslette
  • METHODS AND STRUCTURES FOR CONTROLLING WAFER CURVATURE
    Publication number: 20120329265
    Abstract: Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediately lower layer. The structure includes integrated circuits having compensating stressed film layers.
    Type: Application
    Filed: September 6, 2012
    Publication date: December 27, 2012
    Applicant: International Business Machines Corporation
    Inventors: Mohammed Fazil Fayaz, Jeffery Burton Maxson, Anthony Kendall Stamper, Daniel Scott Vanslette
  • Methods and structures for controlling wafer curvature
    Patent number: 8299615
    Abstract: Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediately lower layer. The structure includes integrated circuits having compensating stressed film layers.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: October 30, 2012
    Assignee: International Business Machines Corporation
    Inventors: Mohammed Fazil Fayaz, Jeffery Burton Maxson, Anthony Kendall Stamper, Daniel Scott Vanslette
  • METHODS AND STRUCTURES FOR CONTROLLING WAFER CURVATURE
    Publication number: 20110049723
    Abstract: Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediately lower layer. The structure includes integrated circuits having compensating stressed film layers.
    Type: Application
    Filed: August 26, 2009
    Publication date: March 3, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mohammed Fazil Fayaz, Jeffery Burton Maxson, Anthony Kendall Stamper, Daniel Scott Vanslette
  • Method for utilizing tungsten barrier in contacts to silicide and structure produced therby
    Publication number: 20020175413
    Abstract: A method of forming a liner (and resultant structure) in a contact includes depositing a first layer of refractory metal, annealing the first layer, and sputter depositing a second layer of refractory metal or a compound or an alloy thereof, over the first layer.
    Type: Application
    Filed: March 29, 2001
    Publication date: November 28, 2002
    Applicant: International Business Machines Corporation
    Inventors: Louis D. Lanzerotti, Randy William Mann, Glen Lester Miles, William Joseph Murphy, Daniel Scott Vanslette