Abstract: A lateral oriented transistor embodied in a semiconductor material, including a first group of directly adjacently placed transistor cells, a second group of directly adjacently placed transistor cells, the second group is spaced apart from the first group thereby providing a spacing, each of the transistor cells includes a drain, a source and a gate, and the lateral oriented transistor further includes a gate interconnect placed in the spacing between the first and second group, and the gate interconnect connects to the gates of the transistor cells.

Abstract: The present invention provides a combination comprising an amount of a keto-enol insecticide and an amount of a compound having the formula (I): R1-O—(CmH2mO)x-(CnH2nO)y-H wherein R1 is linear or branched, saturated or unsaturated acyl radical having from 14 to 20 carbon atoms; m is an integer equal to 2, n is an integer equal to 3, x is an integer of from 1 to 50 and y is an integer of from 0 to 50.

Abstract: Embodiments of the present disclosure provide for generating improved, feasible, and optimized pathways for optimizing operation of an industrial plant or component thereof. Embodiments utilize a multi-variate optimization model that may utilize real-time data and any number of available dynamic and static configurations to optimize for multiple optimization parameters. The multi-variate optimization model outputs an optimization pathway, for example including any number of transformation action(s) representing decarbonization step(s), that enable configuration of the plant or processing unit(s) thereof in a manner that optimizes operations of the plant or processing unit(s).

Abstract: A High Electron Mobility Transistor, (HEMT), structure having a gate, a source and a drain, the HEMT structure including a depletion-mode transistor having a breakdown voltage, current limiting means arranged for ensuring that a drain source current of the HEMT structure, in an off-state of the HEMT structure, is at most 20 nA/mm, being a current per unit gate length of the depletion-mode transistor, the HEMT structure can include just the depletion-mode transistor or a cascode configuration of a depletion-mode transistor with an enhancement mode transistor.

Abstract: A semiconductor transistor comprising: a drain region; a plurality of source regions; and a plurality of gate regions interleaved with the source regions.

Abstract: A switching stage of a Switched Mode Power Supply (SMPS), the switching stage including a switching element including a GaN transistor connected in series with a Metal-Oxide-Semiconductor (MOS) Field Effect Transistor (FET), thereby defining a mid-node in between the GaN transistor and the MOSFET, a controller arranged for driving a gate terminal of the MOSFET based on an Pulse Width Modulation (PWM) input signal, and the controller includes first switch circuitry arranged for providing a low ohmic path between the mid-node and the gate terminal of the MOSFET and control circuitry arranged for controlling the switch circuitry based on the PWM input signal.

Abstract: Embodiments of the present disclosure provide for generating improved, feasible, and optimized pathways for optimizing operation of an industrial plant or component thereof. Embodiments utilize a multi-variate optimization model that may utilize real-time data and any number of available dynamic and static configurations to optimize for multiple optimization parameters. The multi-variate optimization model outputs an optimization pathway, for example including any number of transformation action(s) representing decarbonization step(s), that enable configuration of the plant or processing unit(s) thereof in a manner that optimizes operations of the plant or processing unit(s).

Abstract: The semiconductor device includes: a gate electrode on a semiconductor substrate via a gate insulating film; an offset drain layer in the semiconductor substrate on one side of the gate electrode; a drain layer on the offset drain layer; and a source layer in the semiconductor substrate on another side of the gate electrode. The semiconductor device further includes: a protective film covering the semiconductor substrate; a field plate on the protective film, and having a portion above the offset drain layer; and a field plug connected to the field plate and in the protective film and above the offset drain layer, in such a manner as to avoid reaching the offset drain layer.

Abstract: A LDMOS transistor that may include (i) a first region that is a reduced surface field (RESURF) implant region of a first type; (ii) a second region that is a RESURF implant region of a second type, wherein the first type differs from the second type; (iii) a gate; (iv) a stepped oxide region and a gate oxide region that are positioned above the first region and below the gate.

Abstract: A LDMOS transistor that may include (i) a first region that is a reduced surface field (RESURF) implant region of a first type; (ii) a second region that is a RESURF implant region of a second type, wherein the first type differs from the second type; (iii) a gate; (iv) a stepped oxide region and a gate oxide region that are positioned above the first region and below the gate.

Abstract: The invention provides surface treatments that reduce or eliminate marine biofouling of various surfaces. A surface that is to be subjected to a marine environment can be treated with a mPEG-DOPA. The treated surface is thus rendered less susceptible to fouling of the surface.

Abstract: The invention relates to sulfonamide compounds and methods for activating PKM2. The compounds and methods are useful in treating or preventing a disease or disorder selected from cancer, cell proliferative disorder, inflammatory disorder, metabolic disorder, and immune system disorder.

Abstract: The invention relates to pyrazoline substituted compounds and methods for activating PKM2. The compounds and methods are useful in treating or preventing a disease or disorder selected from cancer, cell proliferative disorder, inflammatory disorder, metabolic disorder, and immune system disorder.

Abstract: The invention relates to sulfonamide compounds and methods for activating PKM2. The compounds and methods are useful in treating or preventing a disease or disorder selected from cancer, cell proliferative disorder, inflammatory disorder, metabolic disorder, and immune system disorder.

Abstract: The invention provides surface treatments that reduce or eliminate marine biofouling of various surfaces. A surface that is to be subjected to a marine environment can be treated with a mPEG-DOPA. The treated surface is thus rendered less susceptible to fouling of the surface.

Abstract: The invention provides surface treatments that reduce or eliminate marine biofouling of various surfaces. A surface that is to be subjected to a marine environment can be treated with a mPEG-DOPA. The treated surface is thus rendered less susceptible to fouling of the surface.

Abstract: The present invention is directed to methods and means for making and using Angpt13 polypeptides. The invention specifically concerns the use of Angpt13 polypeptides in inducing liver regeneration and angiogenesis. Further methods include the use of Angpt13 polypeptides in the diagnosis and treatment of liver disease. Also provided herein are antibodies which bind to the polypeptides of the present invention.

Abstract: A braking system for a lift truck performs all service braking using truck traction drive motors. Mechanical, spring applied, electrically released brakes are coupled to wheels on opposite sides of the truck with the mechanical brakes applying unequal braking forces to the wheels. The mechanical brakes perform park braking and, in the event an electrical system problem arises, backup braking as well that can be modulated by an operator of the truck regardless of the operating condition of the truck.

Abstract: A system for treatment of one or more flowing materials includes a support bed (32) comprising a plurality of support elements (34). The support bed may have a void fraction of at least 45%. An active bed (36), such as a bed of catalytic elements, may be supported by the support bed. The void fraction of the support bed may be larger than that of an equivalent bed of conventional, spherical elements, enabling significant improvements in the flow rate of reactants through the bed and/or a reduced pressure drop across the support bed.

Abstract: A system for treatment of one or more flowing materials includes a support bed (32) comprising a plurality of support elements (34). The support bed may have a void fraction of at least 45%. An active bed (36), such as a bed of catalytic elements, may be supported by the support bed. The void fraction of the support bed may be larger than that of an equivalent bed of conventional, spherical elements, enabling significant improvements in the flow rate of reactants through the bed and/or a reduced pressure drop across the support bed.