Abstract: An integrated non-linear complex oxide thin film heterostructure with a tailored microstructure architecture design and a method of fabrication thereof, inclusive, is provided. The tailored microstructure architecture design mitigates the undesirable effects of thermal strain, hence provides strain relief, which enables the desirable simultaneously achievement of a high permittivity and high dielectric Q/low dielectric loss in concert with one another. The material design and fabrication method thereof; enables enhanced performance, low cost NLCO-based tunable devices which possess desirable attributes including, but are not limited to, tunable device miniaturization, wide tunability, minimization of signal attenuation, reduced device operational power and enhanced operational range. Furthermore, the materials and related process science protocols are complementary metal oxide semiconductor compatible, scalable and affordable.

Abstract: Integrated non-linear complex oxide (NLCO) thin film artificial structures include tailored microstructural and crystalline phases for designed material architectures and a method of fabrication. A nano-scale poly crystal-amorphous composite film includes an amorphous matrix surrounding crystalline domains/inclusions of the form of particles, platelets, rods and/or needles, etc. Artificial thin film layered material configurations include bilayers, repeat “unit cell” bilayers with variable stacking periodicity (N), and multilayers whereby each individual layer, ni, exhibits a different microstructural crystallinity phase state, hence the microstructural phase state is variable in the vertical direction perpendicular to the substrate. NLCO elements can be organized in array configurations.

Abstract: An integrated non-linear complex oxide thin film heterostructure with a tailored microstructure architecture design and a method of fabrication thereof, inclusive, is provided. The tailored microstructure architecture design mitigates the undesirable effects of thermal strain, hence provides strain relief, which enables the desirable simultaneously achievement of a high permittivity and high dielectric Q/low dielectric loss in concert with one another. The material design and fabrication method thereof; enables enhanced performance, low cost NLCO-based tunable devices which possess desirable attributes including, but are not limited to, tunable device miniaturization, wide tunability, minimization of signal attenuation, reduced device operational power and enhanced operational range. Furthermore, the materials and related process science protocols are complementary metal oxide semiconductor compatible, scalable and affordable.