Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

Abstract: Systems and methods for synchronous operation of debris-mitigation devices (DMDs) in an EUV radiation source that emits EUV radiation and debris particles are disclosed. The methods include establishing a select relative angular orientation between the first and second DMDs that provides a maximum amount of transmission of EUV radiation between respective first and second rotatable vanes of the first and second DMDs. The methods also include rotating the first and second sets of vanes to capture at least some of the debris particles while substantially maintaining the select relative angular orientation. The systems employ DMD drive units, and an optical-based encoder disc in one of the DMD drive units measures and controls the rotational speed of the rotatable DMD vanes. Systems and methods for optimally aligning the DMDs are also disclosed.

Abstract: A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of <1019 atoms/cm3 and travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of <1019 electrons/cm3, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

Abstract: Systems and methods for synchronous operation of debris-mitigation devices (DMDs) in an EUV radiation source that emits EUV radiation and debris particles are disclosed. The methods include establishing a select relative angular orientation between the first and second DMDs that provides a maximum amount of transmission of EUV radiation between respective first and second rotatable vanes of the first and second DMDs. The methods also include rotating the first and second sets of vanes to capture at least some of the debris particles while substantially maintaining the select relative angular orientation. The systems employ DMD drive units, and an optical-based encoder disc in one of the DMD drive units measures and controls the rotational speed of the rotatable DMD vanes. Systems and methods for optimally aligning the DMDs are also disclosed.

Abstract: A method of epitaxially growing a final film using a crystalline substrate wherein the final film cannot be grown directly on the substrate surface is disclosed. The method includes forming a transition layer on the upper surface of the substrate. The transition layer has a lattice spacing that varies between its lower and upper surfaces. The lattice spacing at the lower surface matches the lattice spacing of the substrate to within a first lattice mismatch of 7%. The lattice spacing at the upper surface matches the lattice spacing of the final film to within a second lattice mismatch of 7%. The method also includes forming the final film on the upper surface of the transition layer.

Abstract: Source-collector modules for use with EUV lithography systems are disclosed, wherein the source-collector modules employ a laser-produced plasma EUV radiation source and a grazing-incidence collector. The EUV radiation source is generated by first forming an under-dense plasma, and then irradiating the under-dense plasma with infrared radiation of sufficient intensity to create a final EUV-emitting plasma. The grazing incidence collector can include a grating configured to prevent infrared radiation from reaching the intermediate focus. Use of debris mitigation devices preserves the longevity of operation of the source-collector modules.

Abstract: A Sn vapor EUV LLP source system for EUV lithography is disclosed. The system generates a Sn vapor column from a supply of Sn liquid. The Sn column has a Sn-atom density of <1019 atoms/cm3 and travels at or near sonic speeds. The system also has a Sn vapor condenser arranged to receive the Sn vapor column and condense the Sn vapor to form recycled Sn liquid. A pulse laser irradiates a section of the Sn vapor column. Each pulse generates an under-dense Sn plasma having an electron density of <1019 electrons/cm3, thereby allowing the under-dense Sn plasma substantially isotropically emit EUV radiation.

Abstract: Systems, assemblies and methods for thermally managing a grazing incidence collector (GIC) for EUV lithography applications are disclosed. The GIC thermal management assembly includes a GIC mirror shell interfaced with a jacket to form a sealed chamber. An open cell, heat transfer (OCHT) material is disposed within the metal chamber and is thermally and mechanically bonded with the GIC mirror shell and jacket. A coolant is flowed in an azimuthally symmetric fashion through the OCHT material between input and output plenums to effectuate cooling when the GIC thermal management assembly is used in a GIC mirror system configured to receive and form collected EUV radiation from an EUV radiation source.

Abstract: Evaporate thermal management systems for and methods of grazing incidence collectors (GICs) for extreme ultraviolet (EUV) lithography include a GIC shell interfaced with a jacket to form a structure having a leading end and that defines a chamber. The chamber operably supports at least one wicking layer. A conduit connects the wicking layer to a condenser system that support cooling fluid in a reservoir. When heat is applied to the leading end, the cooling fluid is drawn into the chamber from the condenser unit via capillary action in the wicking layer and an optional gravity assist, while vapor is drawn in the opposite direction from the chamber to the condenser unit. Heat is removed from the condensed vapor at the condenser unit, thereby cooling the GIC mirror shell.

Abstract: An improved bee smoker is provided for producing smoke on demand for use in controlling bees that includes a housing, a power source, a heating element, a fan, and switches.

Abstract: Evaporate thermal management systems for and methods of grazing incidence collectors (GICs) for extreme ultraviolet (EUV) lithography include a GIC shell interfaced with a jacket to form a structure having a leading end and that defines a chamber. The chamber operably supports at least one wicking layer. A conduit connects the wicking layer to a condenser system that support cooling fluid in a reservoir. When heat is applied to the leading end, the cooling fluid is drawn into the chamber from the condenser unit via capillary action in the wicking layer and an optional gravity assist, while vapor is drawn in the opposite direction from the chamber to the condenser unit. Heat is removed from the condensed vapor at the condenser unit, thereby cooling the GIC mirror shell.

Abstract: Systems, assemblies and methods for thermally managing a grazing incidence collector (GIC) for EUV lithography applications are disclosed. The GIC thermal management assembly includes a GIC mirror shell interfaced with a jacket to form a sealed chamber. An open cell, heat transfer (OCHT) material is disposed within the metal chamber and is thermally and mechanically bonded with the GIC mirror shell and jacket. A coolant is flowed in an azimuthally symmetric fashion through the OCHT material between input and output plenums to effectuate cooling when the GIC thermal management assembly is used in a GIC mirror system configured to receive and form collected EUV radiation from an EUV radiation source.

Abstract: An improved bee smoker is provided for producing smoke on demand for use in controlling bees that includes a housing, a power source, a heating element, a fan, and switches.

Abstract: Disclosed are apparatus and methods for determining accurate optical property values of turbid media. In one embodiment, the method includes (a) providing a light source, having a first wavelength and a known illumination power, sequentially at a plurality of specific illumination positions on a first surface of the specimen; (b) for each specific position of the light source, obtaining light emission measurements from a second surface of the specimen that is opposite the first surface, wherein the light emission measurements are obtained for a plurality of surface positions of the second surface; and (c) for each specific illumination position of the light source at the first surface of the specimen, determining one or more optical properties for the specimen based on the specific illumination position of the light source, the first wavelength of the light source, the known illumination power of the light source, and the obtained light emission measurements for such each specific illumination position.

Abstract: Described herein are systems and methods for obtaining a three-dimensional (3D) representation of the distribution of fluorescent probes inside a sample, such as a mammal. Using a) fluorescent light emission data from one or more images, b) a surface representation of the mammal, and c) computer-implemented photon propagation models, the systems and methods produce a 3D representation of the fluorescent probe distribution in the mammal. The distribution may indicate—in 3D—the location, size, and/or brightness or concentration of one or more fluorescent probes in the mammal.