Patents by Inventor Daniel Steigerwald
Daniel Steigerwald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11658273Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: GrantFiled: December 21, 2020Date of Patent: May 23, 2023Assignee: Lumileds LLCInventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Publication number: 20210111321Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: ApplicationFiled: December 21, 2020Publication date: April 15, 2021Applicant: LUMILEDS LLCInventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Patent number: 10873013Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: GrantFiled: September 26, 2018Date of Patent: December 22, 2020Assignee: Lumileds LLCInventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Publication number: 20190027664Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: ApplicationFiled: September 26, 2018Publication date: January 24, 2019Inventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Patent number: 10134965Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: GrantFiled: March 22, 2016Date of Patent: November 20, 2018Assignee: Lumileds LLCInventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Patent number: 10134964Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: GrantFiled: May 29, 2013Date of Patent: November 20, 2018Assignee: LUMILEDS LLCInventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Publication number: 20160204315Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: ApplicationFiled: March 22, 2016Publication date: July 14, 2016Inventors: Frederic Stephane Diana, Kwong-Hin Henry Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Publication number: 20130252358Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: ApplicationFiled: May 29, 2013Publication date: September 26, 2013Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Patent number: 8471282Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: GrantFiled: June 7, 2010Date of Patent: June 25, 2013Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge I. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Patent number: 8450754Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.Type: GrantFiled: October 10, 2011Date of Patent: May 28, 2013Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Michael R. Krames, John E. Epler, Daniel A. Steigerwald, Tal Margalith
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Patent number: 8400064Abstract: A transient voltage suppressor circuit is disclosed for a plurality (N) of LEDs connected in series. Only one zener diode is created for connection to each node between LEDs, and a pair of zener diodes (the “end” zener diodes) are connected to the two pins (anode and cathode pads) of the series string. Therefore, only N+1 zener diodes are used. The end zener diodes (Q1 and Qn+1) effectively create back-to-back zener diodes across the two pins since the zener diodes share a common p+ substrate. The n+ regions of the end zener diodes Q1 and Qn+1 have the highest breakdown voltage requirement and must be placed relatively far apart. Adjacent n+ regions of the intermediate zener diodes have a much lower breakdown voltage requirement so may be located close together. The zener diodes may be placed within a very small footprint or can be larger for better suppressor performance.Type: GrantFiled: September 9, 2009Date of Patent: March 19, 2013Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Yajun Wei, William D. Collins, III, Daniel A. Steigerwald
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Patent number: 8384118Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.Type: GrantFiled: April 27, 2010Date of Patent: February 26, 2013Assignees: Koninklijke Philips electronics N.V., Philips Lumileds Lighting Company LLCInventors: Stefano Schiaffino, Daniel A. Steigerwald, Mari Holcomb, Grigoriy Basin, Paul Martin, John Epler
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Publication number: 20120025231Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.Type: ApplicationFiled: October 10, 2011Publication date: February 2, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Michael R. Krames, John E. Epler, Daniel A. Steigerwald, Tal Margalith
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Publication number: 20110297979Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: ApplicationFiled: June 7, 2010Publication date: December 8, 2011Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Frederic S. DIANA, Henry Kwong-Hin CHOY, Qingwei MO, Serge L. RUDAZ, Frank L. WEI, Daniel A, STEIGERWALD
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Patent number: 8062916Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.Type: GrantFiled: November 6, 2008Date of Patent: November 22, 2011Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting CompanyInventors: Michael R. Krames, John E. Epler, Daniel A. Steigerwald, Tal Margalith
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Publication number: 20110136273Abstract: A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact.Type: ApplicationFiled: February 17, 2011Publication date: June 9, 2011Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Henry Kwong-Hin Choy, Daniel A. Steigerwald
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Publication number: 20110057569Abstract: A transient voltage suppressor circuit is disclosed for a plurality (N) of LEDs connected in series. Only one zener diode is created for connection to each node between LEDs, and a pair of zener diodes (the “end” zener diodes) are connected to the two pins (anode and cathode pads) of the series string. Therefore, only N+1 zener diodes are used. The end zener diodes (Q1 and Qn+1) effectively create back-to-back zener diodes across the two pins since the zener diodes share a common p+ substrate. The n+ regions of the end zener diodes Q1 and Qn+1 have the highest breakdown voltage requirement and must be placed relatively far apart. Adjacent n+ regions of the intermediate zener diodes have a much lower breakdown voltage requirement so may be located close together. Since there are fewer zener diodes and their spacings may be small, the zener diodes may be placed within a very small footprint or can be larger for better suppressor performance.Type: ApplicationFiled: September 9, 2009Publication date: March 10, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Yajun WEI, William D. COLLINS III, Daniel A. STEIGERWALD
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Publication number: 20100207157Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.Type: ApplicationFiled: April 27, 2010Publication date: August 19, 2010Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Stefano SCHIAFFINO, Daniel A. STEIGERWALD, Mari HOLCOMB, Grigoriy BASIN, Paul MARTIN, John EPLER
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Patent number: 7736945Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.Type: GrantFiled: December 15, 2006Date of Patent: June 15, 2010Assignees: Philips Lumileds Lighting Company, LLC, Koninklijke Philips Electronics N.V.Inventors: Stefano Schiaffino, Daniel A. Steigerwald, Mari Holcomb, Grigoriy Basin, Paul Martin, John Epler
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Publication number: 20100109030Abstract: LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.Type: ApplicationFiled: November 6, 2008Publication date: May 6, 2010Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Michael R. KRAMES, John E. EPLER, Daniel A. STEIGERWALD, Tal MARGALITH