Patents by Inventor Daniel Tang
Daniel Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200010395Abstract: Method for preparing a ?-hydroxyketone having 4 to 8 carbon atoms by reacting formaldehyde with a branched or unbranched dialkyl ketone having 3 to 7 carbon atoms in the liquid phase in a reactor in the presence of a basic component at a temperature of 50 to 150° C. and a pressure of 0.2 to 10 MPa abs, in which (a) a trialkylamine having 1 to 4 carbon atoms per alkyl group is used as basic component and the reaction (b) is carried out in the presence of 1 to 25% by weight water, based on the liquid phase, and (c) at a molar ratio of trialkylamine to formaldehyde in the liquid phase of from 1 to 5.Type: ApplicationFiled: July 2, 2019Publication date: January 9, 2020Inventors: Dagmar Pascale KUNSMANN-KEITEL, Georg Heinrich GROSCH, Jan-Dirk ARNDT, Gauthier Luc Maruice AVERLANT, Wolf-Steffen WEISSKER, Marcus Georg SCHREMS, Dan-Tam Daniel TANG
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Patent number: 10328988Abstract: A scooter is provided. The scooter comprises a frame assembly including a main frame for a user, an extendable frame movably connected to the main frame and configured to be extendable away from the main frame at an interface at which the main frame and the extendable frame meet, and a wheel assembly connected to the frame assembly. The extendable frame forms a cargo space at an extended position.Type: GrantFiled: July 31, 2017Date of Patent: June 25, 2019Assignee: Ford Global Technologies LLCInventors: Eui Shik Bang, James Yu-Hsin Kuo, Chelsia Ka Po Lau, Daniel Tang, Jack Li
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Publication number: 20190113935Abstract: A vehicle includes a body, a removable cab, a cargo movement subsystem, and a computing device. The removable cab is attachable to the body. The computing device includes a processor and a memory. The computing device is programmed to actuate at least one vehicle subsystem to move the vehicle to deliver cargo stored in the cab and the cargo movement subsystem move the cargo. The cargo movement subsystem is arranged to move the cargo from the cab to a position accessible from an exterior of the vehicle.Type: ApplicationFiled: July 26, 2016Publication date: April 18, 2019Inventors: James Yu-Hsin KUO, Daniel TANG, Chelsia Ka Po LAU, Jack LI, Euishik BANG
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Publication number: 20180037288Abstract: A scooter is provided. The scooter comprises a frame assembly including a main frame for a user, an extendable frame movably connected to the main frame and configured to be extendable away from the main frame at an interface at which the main frame and the extendable frame meet, and a wheel assembly connected to the frame assembly. The extendable frame forms a cargo space at an extended position.Type: ApplicationFiled: July 31, 2017Publication date: February 8, 2018Inventors: Eui Shik Bang, James Yu-Hsin Kuo, Chelsia Ka Po Lau, Daniel Tang, Jack Li
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Publication number: 20180029431Abstract: A personal transportation device comprises a frame, a wheel pivotably connected to a frame and switchable between a driving configuration and a flying configuration, a motor to rotate the wheel; and an automatic cruise module. The automatic cruise module is configured to control the wheel and guide the personal transportation device to fly from a first location to a second location according to a designated route as an unmanned aircraft.Type: ApplicationFiled: July 24, 2017Publication date: February 1, 2018Inventors: Daniel Tang, Chelsia Ka Po Lau, James Yu-Hsin Kuo, Eui Shik Bang, Jack Li
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Publication number: 20160293734Abstract: In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.Type: ApplicationFiled: April 3, 2015Publication date: October 6, 2016Inventors: Daniel TANG, Zhimin WAN, Ching-I LI, Ger-Pin LIN
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Patent number: 9450078Abstract: In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.Type: GrantFiled: April 3, 2015Date of Patent: September 20, 2016Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Daniel Tang, Zhimin Wan, Ching-I Li, Ger-Pin Lin
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Publication number: 20160233047Abstract: Systems and processes for plasma-based material modification of a work piece are provided. In an example process, a first plasma in a plasma source chamber is generated. A magnetic field is generated using a plurality of magnets. The magnetic field confines electrons of the first plasma having energy greater than 10 eV within the plasma source chamber. A second plasma is generated in a process chamber coupled to the plasma source chamber. An ion beam is generated in the process chamber by extracting ions from the first plasma through the plurality of magnets. The ion beam travels through the second plasma and is neutralized by the second plasma to generate a neutral beam. The work piece is positioned in the process chamber such that the neutral beam treats a surface of the work piece.Type: ApplicationFiled: April 20, 2016Publication date: August 11, 2016Applicant: Advanced Ion Beam Technology, Inc.Inventors: Daniel TANG, Tienyu SHENG
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Patent number: 9209278Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.Type: GrantFiled: March 3, 2014Date of Patent: December 8, 2015Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Daniel Tang, Tzu-Shih Yen
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Patent number: 9159810Abstract: In doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. A first ion implant is performed in a region of the non-planar semiconductor body. The first ion implant has a first implant energy and a first implant angle. A second ion implant is performed in the same region of the non-planar semiconductor body. The second ion implant has a second implant energy and a second implant angle. The first implant energy may be different from the second implant energy. Additionally, the first implant angle may be different from the second implant angle.Type: GrantFiled: August 22, 2012Date of Patent: October 13, 2015Assignee: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Daniel Tang, Tzu-Shih Yen
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Patent number: 9006065Abstract: In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different.Type: GrantFiled: October 9, 2012Date of Patent: April 14, 2015Assignee: Advanced Ion Beam Technology, Inc.Inventors: Tzu-Shih Yen, Daniel Tang, Tsungnan Cheng
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Publication number: 20150031181Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.Type: ApplicationFiled: March 3, 2014Publication date: January 29, 2015Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Daniel TANG, Tzu-Shih YEN
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Patent number: 8871584Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched to expose a first region of the fin. A portion of the first region is then doped with a dopant.Type: GrantFiled: July 26, 2012Date of Patent: October 28, 2014Assignee: Advanced Ion Beam Technology, Inc.Inventors: Daniel Tang, Tzu-Shih Yen
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Publication number: 20140175568Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.Type: ApplicationFiled: March 3, 2014Publication date: June 26, 2014Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Daniel TANG, Tzu-Shih YEN
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Publication number: 20140097487Abstract: In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage may be generated to implant dopant ions into a region of the non-planar semiconductor body. A second bias voltage may be generated to implant dopant ions into the same region. In one example, the first bias voltage and the second bias voltage may be different.Type: ApplicationFiled: October 9, 2012Publication date: April 10, 2014Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Tzu-Shih YEN, Daniel TANG, Tsungnan CHENG
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Patent number: 8685825Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.Type: GrantFiled: July 27, 2011Date of Patent: April 1, 2014Assignee: Advanced Ion Beam Technology, Inc.Inventors: Daniel Tang, Tzu-Shih Yen
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Publication number: 20140054679Abstract: In doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. A first ion implant is performed in a region of the non-planar semiconductor body. The first ion implant has a first implant energy and a first implant angle. A second ion implant is performed in the same region of the non-planar semiconductor body. The second ion implant has a second implant energy and a second implant angle. The first implant energy may be different from the second implant energy. Additionally, the first implant angle may be different from the second implant angle.Type: ApplicationFiled: August 22, 2012Publication date: February 27, 2014Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Daniel TANG, Tzu-Shih YEN
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Publication number: 20130187207Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched to expose a first region of the fin. A portion of the first region is then doped with a dopant.Type: ApplicationFiled: July 26, 2012Publication date: July 25, 2013Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Daniel TANG, Tzu-Shih Yen
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Publication number: 20130026539Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.Type: ApplicationFiled: July 27, 2011Publication date: January 31, 2013Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Daniel TANG, Tzu-Shih Yen
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Patent number: 8211784Abstract: A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is higher in the main carbon-rich regions and lower in the additional carbon-rich regions, and optionally, the absolute value of a gradient of the carbon concentration of the bottom portion of the main carbon-rich regions is higher than the absolute value of a gradient of the carbon concentration of the additional carbon-rich regions. Therefore, the leakage current induced by a lattice mismatch effect at the carbon-rich and the carbon-free interface can be minimized.Type: GrantFiled: October 26, 2009Date of Patent: July 3, 2012Assignee: Advanced Ion Beam Technology, Inc.Inventors: Jason Hong, Daniel Tang