Patents by Inventor Daniel Tuman

Daniel Tuman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 3993934
    Abstract: A method for determining whether an integrated circuit chip containing a plurality of separable circuits is operable when one or more of the separable circuits is not functional.A chip including a plurality of discrete or separable circuits, each of which include means for selectively receiving and distributing a voltage level necessary to render the particular circuit operable, the chip further including a region of one type conductivity at said voltage level common to all of the discrete circuits is tested by a method which will insure that short-circuits between a particular circuit found not to be functional and therefore not to be rendered operable and the common region will not inadvertently apply the voltage level from the common region to voltage receiving and distribution means in the non-functional circuit.All the discrete circuits are first tested to determine which are functional.
    Type: Grant
    Filed: November 30, 1973
    Date of Patent: November 23, 1976
    Assignee: IBM Corporation
    Inventors: Theodore H. Baker, Majid Ghafghaichi, Richard C. Stevens, Daniel Tuman
  • Patent number: 3983023
    Abstract: A planar integrated semiconductor circuit master-slice structure in which the insulation layer over the planar surface remains intact and free of undesirable short-circuit paths in the area beneath excess "unused" contact terminals which are not part of the selected circuit configuration formed by a selected surface metallization pattern on the insulative layer which selectively interconnects less than all of the contact terminals with less than all of the components extending from the planar surface of a semiconductor substrate beneath the insulative layer.During D.C. sputter cleaning or etching utilized in the formation of the contact terminals and the metallization pattern, there is an undesirable charge accumulation on the unused contact terminals which tends to exceed the dielectric breakdown strength of the insulative layer beneath the terminal. This shorts the unused pad to the semiconductor substrate beneath the terminal.
    Type: Grant
    Filed: March 30, 1971
    Date of Patent: September 28, 1976
    Assignee: IBM Corporation
    Inventors: Theodore H. Baker, Majid Ghafghaichi, Daniel Tuman