Patents by Inventor Daniel Turover

Daniel Turover has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of single-crystal silicon carbide
    Patent number: 7655091
    Abstract: The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.
    Type: Grant
    Filed: May 15, 2003
    Date of Patent: February 2, 2010
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Roland Madar, Michel Pons, Francis Baillet, Ludovic Charpentier, Etienne Pernot, Didier Chaussende, Daniel Turover
  • Formation of single-crystal silicon carbide
    Publication number: 20050257734
    Abstract: The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.
    Type: Application
    Filed: May 15, 2003
    Publication date: November 24, 2005
    Inventors: Roland Madar, Michel Pons, Francis Baillet, Lucovic Charpentier, Etienne Pernot, Didier Chaussende, Daniel Turover