Abstract: An apparatus and method for determining the distance of a semiconductor wafer from a nozzle of an edge bead removal system. A rotationally adjustable gap gauge is placed over a vacuum chuck of an edge bead removal system. The gap gauge has a ramped surface which is located proximate to the nozzle when the gap gauge is placed over the vacuum chuck. By rotating the gap gauge on the vacuum chuck, the ramped surface is brought closer to the nozzle. When the nozzle contacts the ramped surface, the position of the gap gauge, as shown by calibration marks on the gap gauge, are recorded. The calibration marks on the gap gauge indicate the corresponding distance that will exist between the nozzle and the backside of a semiconductor wafer when the gap gauge is removed and a semiconductor wafer is placed onto the vacuum chuck. The edge bead removal system is then adjusted such that a desired distance will exist between the nozzle and a semiconductor wafer when a semiconductor wafer is placed onto the vacuum chuck.

Abstract: Using systems and methods wherein the diffuser element can be removed independently of upper electrode assembly removal, maintenance time associated with diffuser plate cleaning can be substantially reduced (e.g., several hours per week of operation). Because a diffuser element should typically be cleaned at least 3-4 times more frequently than the upper electrode assembly, maintenance costs over the course of an annual operating period can therefore be reduced significantly. Further, use of a diffuser element which can be independently removed permits portions of an upper electrode assembly to be frequently cleaned in place, thus further enhancing operability of the etching system without increasing operating costs.