Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers.

Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers.

Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

Abstract: An apparatus for contaminant control, having: a first optical assembly including: a first light homogenizer tunnel with: a first end connected to an extreme ultra-violet light source, a second end in communication with a destination chamber, a first enclosed space, and, a first gas input arranged to introduce a first gas such that the first gas flows in a first direction toward the first end and in a second direction toward the second end. The apparatus alternately having: a second optical assembly including: a second light homogenizer tunnel with: a third end connected to an extreme ultra-violet light source, a fourth end in communication with a destination chamber, a second enclosed space, a diffusion barrier tube including: a fifth end facing the fourth end and a sixth end in communication with a destination chamber, and a second gas input between the second light homogenizer tunnel and the diffusion tube.

Abstract: Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.

Abstract: A method and apparatus for generating extreme ultraviolet (EUV) light is disclosed. The method may comprise non-thermally ablating a target material utilizing a first laser beam. The first laser beam may be configured for ejecting a portion of the target material in a non-thermal manner to create a plume. The method may further comprise irradiating the plume utilizing a second laser beam to produce a high-temperature plasma for EUV radiation.

Abstract: An apparatus comprises an optics assembly and a plate. The optics assembly configured to focus light from an EUV source onto a reticle or sensor. The plate has an opening to allow the EUV light to pass through disposed between the optics assembly and the reticle or sensor. The plate is cooled to a temperature less than that of the reticle or sensor. The plate is engineered to balance out heat absorbed from the reticle or sensor with heat absorbed by the plate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.

Abstract: The present disclosure is directed to an illumination system. The illumination system may include a base member rotatable about a rotation axis and a plurality of mirrors disposed on an outer surface of the base member along a perimeter of the base member. The mirrors may be oriented at a predetermined angle. The illumination system also includes at least two illumination sources. Each of the mirrors of the first plurality of mirrors is configured to receive radiation from the first illumination source at a first portion of each mirror at a first time. The mirror is configured to reflect the radiation to an optical path. Each of the mirrors is further configured to receive radiation from the second illumination source at a second portion of the mirror at a second time. The mirrors reflect the radiation from the second illumination source to the common optical path.

Abstract: One embodiment relates to a method of model-based optical metrology. An area of a geometrical structure of dispersive materials on a substrate is illuminated with polarized incident electromagnetic radiation using an illuminator of a scatterometer apparatus. Spectral components of the incident electromagnetic radiation reflected from the area are measured using a detector of the scatterometer apparatus. Using a computer for the scatterometer apparatus, parameter values are determined that minimize an objective function which represents a difference between the measured spectral components and computed spectral components based on a parameterized model of the geometrical structure. Steps for determining the parameter values that minimize the objective function include: computing a solution to state equations driven by a function representing the incident electromagnetic radiation, and computing a solution to an adjoint to the state equations. Other embodiments and features are also disclosed.

Abstract: A method for synchronizing sample stage motion with a time delay integration (TDI) charge-couple device (CCD) in a semiconductor inspection tool, including: measuring a lateral position of a stage holding a sample being inspected; measuring a vertical position of the stage; determining a corrected lateral position of an imaged pixel of the sample based on the measured lateral and vertical positions; and synchronizing charge transfer of the TDI CCD with the corrected lateral position of the imaged pixel.

Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.

Abstract: An apparatus for contaminant control, having: a first optical assembly including: a first light homogenizer tunnel with: a first end connected to an extreme ultra-violet light source, a second end in communication with a destination chamber, a first enclosed space, and, a first gas input arranged to introduce a first gas such that the first gas flows in a first direction toward the first end and in a second direction toward the second end. The apparatus alternately having: a second optical assembly including: a second light homogenizer tunnel with: a third end connected to an extreme ultra-violet light source, a fourth end in communication with a destination chamber, a second enclosed space, a diffusion barrier tube including: a fifth end facing the fourth end and a sixth end in communication with a destination chamber, and a second gas input between the second light homogenizer tunnel and the diffusion tube.

Abstract: The present disclosure is directed to an illumination system. The illumination system may include a base member rotatable about a rotation axis and a plurality of mirrors disposed on an outer surface of the base member along a perimeter of the base member. The mirrors may be oriented at a predetermined angle. The illumination system also includes at least two illumination sources. Each of the mirrors of the first plurality of mirrors is configured to receive radiation from the first illumination source at a first portion of each mirror at a first time. The mirror is configured to reflect the radiation to an optical path. Each of the mirrors is further configured to receive radiation from the second illumination source at a second portion of the mirror at a second time. The mirrors reflect the radiation from the second illumination source to the common optical path.

Abstract: A method for synchronizing sample stage motion with a time delay integration (TDI) charge-couple device (CCD) in a semiconductor inspection tool, including: measuring a lateral position of a stage holding a sample being inspected; measuring a vertical position of the stage; determining a corrected lateral position of an imaged pixel of the sample based on the measured lateral and vertical positions; and synchronizing charge transfer of the TDI CCD with the corrected lateral position of the imaged pixel.

Abstract: An apparatus comprises an optics assembly and a plate. The optics assembly configured to focus light from an EUV source onto a reticle or sensor. The plate has an opening to allow the EUV light to pass through disposed between the optics assembly and the reticle or sensor. The plate is cooled to a temperature less than that of the reticle or sensor. The plate is engineered to balance out heat absorbed from the reticle or sensor with heat absorbed by the plate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A method and apparatus for generating extreme ultraviolet (EUV) light is disclosed. The method may comprise non-thermally ablating a target material utilizing a first laser beam. The first laser beam may be configured for ejecting a portion of the target material in a non-thermal manner to create a plume. The method may further comprise irradiating the plume utilizing a second laser beam to produce a high-temperature plasma for EUV radiation.

Abstract: Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.

Abstract: In an embodiment, a method of time-domain simulation for simulating scattering spectra is described. The method may provide for computing spatial derivatives including computing spectral derivatives in some portion of the domain and finite difference derivatives in some other portion of the domain; forming an equation for non-reflecting boundary conditions; and computing a time-stepping scheme using a high-order unconditionally stable computation method.