Abstract: The present invention relates to a handbag clasp (1) comprising a first clasping element (2) provided on either one of a handbag flap (21) and a handbag body (31) and a second clasping element (3) provided on the other one of the handbag flap (21) and the handbag body (31) and adapted to collaborate together to lock/unlock the handbag clasp (1) in order to permit closing/opening of the handbag, wherein the first clasping element (1) comprises a first fixed part (22) and a mobile part (23), the first fixed part (22) comprising a first abutting portion (25) and the mobile part (23) presenting a second abutting portion (28) and being hingedly fixed to the first fixed part (22) so as to be moved between a first unlocking position and a second locking position, the second clasping element (3) comprises a second fixed part (32) and a locking element (33) providing a recess (35) between them, wherein the recess is adapted to receive the first abutting portion and presents a third abutting portion adapted to come in

Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: A method for automated in-line detection of deviations of an actual state of a fluid from a reference state is disclosed wherein measured values captured at the same time are evaluated in a combined manner with respect to at least three measurement variables that are different measurement quantities of the fluid and/or a measurement quantity of the fluid measured at different measuring points. The method includes creating a reference data set, wherein reference measured values are mapped to a reference vector of a vector space using a neural network; in-line measurement, wherein measured values at all times are mapped to a measurement vector using the neural network; comparing the measurement vector with the reference vectors using a kernel density estimator of a predefinable window width; and creating an assessment with respect to a deviation of the actual state from the reference state on the basis of the kernel density estimator.

Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.

Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: Described herein is a process for switching an electrochromic cell including at least a first electrode layer and a second electrode layer. The cell also includes an ion-conducting layer that separates the first and second electrode layers and a temperature sensor for measuring a temperature in or on or in the vicinity of the electrochromic cell. Moreover, a first contact member is electronically connected with the first electrode layer, and a second contact member is electronically connected with the second electrode layer. Furthermore, at least the first electrode layer includes an organic polymer matrix and, dispersed therein, an electrochromic material, electronically conductive nanoobjects, and an electrolyte dissolved in a solvent. Further, the process including measuring the current flowing through the cell if a voltage is applied to the electrode layers, applying a voltage to the contact members, and varying the applied voltage as a function of the current.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (lla), (lib), (lie), or (lid) wherein A is O or NRN, R and RN is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R1, R2, R3, and R4 is hydrogen, an alkyl group, an alkenyl group, an aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.

Abstract: A method for automated in-line detection of deviations of an actual state of a fluid from a reference state is disclosed wherein measured values captured at the same time are evaluated in a combined manner with respect to at least three measurement variables that are different measurement quantities of the fluid and/or a measurement quantity of the fluid measured at different measuring points. The method includes creating a reference data set, wherein reference measured values are mapped to a reference vector of a vector space using a neural network; in-line measurement, wherein measured values at all times are mapped to a measurement vector using the neural network; comparing the measurement vector with the reference vectors using a kernel density estimator of a predefinable window width; and creating an assessment with respect to a deviation of the actual state from the reference state on the basis of the kernel density estimator.

Abstract: The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (R1NR23)5Me X1aX2b wherein R1 is C1-C4-alkyl, R2 are independently of one another hydrogen or C1-C4-alkyl, Me is a divalent metal, X1 and X2 have different meanings and are independently of one another selected from F, CI, Br, I or a pseudohalide, a and b are independently of one another 0 to 7, wherein the sum of a and b is 7.

Abstract: Described herein is a process for preparing a thin film including a solid electrolyte, which includes lithium and sulfur.

Abstract: The present invention relates to a new amorphous material with advantageous properties as charge transport material and/or absorber material for various applications, in particular in photoelectric conversion devices, i.e. an amorphous material of the composition (R1NR23)5Me X1aX2b wherein R1 is C1-C4-alkyl, R2 are independently of one another hydrogen or C1-C4-alkyl, Me is a divalent metal, X1 and X2 have different meanings and are independently of one another selected from F, CI, Br, I or a pseudohalide, a and b are independently of one another 0 to 7, wherein the sum of a and b is 7.

Abstract: An electronic device (1) includes a semiconductor substrate (3) having a front surface (7), a first electrode (8) and a second electrode (9) disposed on the front surface (7) of the substrate (3), wherein the first electrode (8) and the second electrode (9) each have at least one epitaxial graphene monolayer (10). The at least one epitaxial graphene monolayer (10) of the first electrode (8) forms an ohmic contact with the substrate (3) and the at least one epitaxial graphene monolayer (10) of the second electrode (9) forms a Schottky barrier with the substrate (3).

Abstract: A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the electrodes (4, 5) through the semiconductor substrate (3).

Abstract: A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the electrodes (4, 5) through the semiconductor substrate (3).

Abstract: An electronic device (1) includes a semiconductor substrate (3) having a front surface (7), a first electrode (8) and a second electrode (9) disposed on the front surface (7) of the substrate (3), wherein the first electrode (8) and the second electrode (9) each have at least one epitaxial graphene monolayer (10). The at least one epitaxial graphene monolayer (10) of the first electrode (8) forms an ohmic contact with the substrate (3) and the at least one epitaxial graphene monolayer (10) of the second electrode (9) forms a Schottky barrier with the substrate (3).