Patents by Inventor Daniel Wamwangi

Daniel Wamwangi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change material layers and phase change memory devices including the same
    Patent number: 8017929
    Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.
    Type: Grant
    Filed: October 6, 2008
    Date of Patent: September 13, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Youn-seon Kang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Yoon-ho Khang, Cheol-kyu Kim, Dong-seok Suh, Tae-yon Lee
  • Doped phase change material and pram including the same
    Patent number: 7763886
    Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100?(X+Y+Z). The index X of indium (In) is in the range of 25 wt %?X?60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %?Y?17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %<Z?75 wt %.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: July 27, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-ho Khang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Dong-seok Suh
  • Phase change material layers and phase change memory devices including the same
    Publication number: 20090179185
    Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.
    Type: Application
    Filed: October 6, 2008
    Publication date: July 16, 2009
    Inventors: Youn-seon Kang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Yoon-ho Khang, Cheol-kyu Kim, Dong-seok Suh, Tae-yon Lee
  • Doped phase change material and pram including the same
    Publication number: 20080149908
    Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100?(X+Y+Z). The index X of indium (In) is in the range of 25 wt %?X?60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %?Y?17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %<Z?75 wt %.
    Type: Application
    Filed: October 31, 2007
    Publication date: June 26, 2008
    Inventors: Yoon-ho Khang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Dong-seok Suh