Abstract: Methods for depositing molybdenum silicide films on a substrate are described. The substrate is exposed to a molybdenum- and silicon-containing precursor and a silane reactant to form the molybdenum silicide film. The exposures can be sequential or simultaneous. Inherent deposition selectivity of the process can be achieved through adjusting process parameters, particularly temperature or precursor dose, to produce more deposition on a metal material over a dielectric material.

Abstract: A processing method includes forming an interfacial layer on a surface of a channel comprising silicon (Si) located between a source and a drain on a semiconductor substrate including a low-? dielectric layer, and selectively depositing a high-? dielectric layer directly on the interfacial layer relative to the low-? dielectric layer by exposing the semiconductor substrate to a metal-containing precursor, a purge gas, an alcohol, and the purge gas.

Abstract: Methods for depositing molybdenum silicide films on a substrate are described. The substrate is exposed to a molybdenum- and silicon-containing precursor and a silane reactant to form the molybdenum silicide film. The exposures can be sequential or simultaneous. Inherent deposition selectivity of the process can be achieved through adjusting process parameters, particularly temperature or precursor dose, to produce more deposition on a metal material over a dielectric material.

Abstract: In some aspects of the present disclosure, a method includes performing an atomic layer deposition (ALD) process to form an antimony-containing coating of a surface of a substrate. The ALD process includes providing a first reactant to the surface of the substrate. The first reactant adsorbs onto the surface to form an adsorption layer thereon. The ALD process further includes providing a second reactant to the surface of the substrate. The second reactant includes a reducing agent. The second reactant reacts with the adsorption layer to form a layer of the antimony-containing coating. The ALD process further includes repeating the providing of the first reactant and the providing of the second reactant one or more times to form the antimony-containing coating.