Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has a lower perpendicular magnetic anisotropy field, Hk, as compared with the first magnetic free layer. The multilayered magnetic free layer structure of the present application substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers. The lower Hk value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the second magnetic free layer and thus reduces, and even eliminates, write errors.

Abstract: A SOT MRAM structure having a perpendicular magnetic free layer magnetization is provided The structure includes a spin conductor charge insulator layer having a horizontal portion and a vertical portion, and a spin conductor layer contacting the horizontal portion of the spin conductor charge insulator layer, and a first sidewall of the vertical portion of the spin conductor charge insulator layer. The structure further includes a MTJ structure having a magnetic free layer in direct physical contact with the spin conductor layer, a MTJ cap, a MRAM electrode-containing hard mask, and an I-shaped SOT channel located on a second sidewall of the vertical portion of the spin conductor charge insulator layer. The structure further includes a dielectric pillar located adjacent to, and in direct contact with, the I-shaped SOT channel.

Abstract: Embodiments of present invention provide a MRAM structure. The structure includes a metallic wire, the metallic wire having a width between a first side and a second side; a length between a first end and a second end; and a lengthwise axis, and being symmetric with respect to the lengthwise axis; a conductive via contacting a first area of the metallic wire; and a magnetic tunnel junction (MTJ) stack placed at a second area of the metallic wire. The MRAM structure is asymmetric with respect to the lengthwise axis to have a second metallic wire formed at the first side of the metallic wire or have the MTJ stack placed asymmetric with respect to the lengthwise axis. A method of forming the MRAM structure is also provided.

Abstract: A magnetoresistive random access memory (MRAM) including spin-transfer torque (STT) MRAM is provided that has enhanced data retention. The enhanced data retention is provided by constructing a MTJ pillar having a temperature-independent Delta, where Delta is Delta=Eb/kt, wherein Eb is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. Notably, the present application provides a way for EB to actually increase with temperature, which can cancel the effect of the term KT, resulting in a temperature independent Delta.

Abstract: A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a narrow base and the use of a spin diffusion layer (i.e., non-magnetic, spin-conducting metallic layer) which gives a low resistance-area product (RA) for the tunnel barrier layer that forms an interface with the spin diffusion layer.

Abstract: A spin-orbit torque magnetoresistive random-access memory device formed by forming an array of transistors, where a column of the array includes a source line contacting the source contact of each transistor of the column, forming a spin-orbit-torque (SOT) line contacting the drain contacts of the transistors of the row, and forming an array of unit cells, each unit cell including a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SOT line, where the SOT-MRAM cell stack includes a free layer, a tunnel junction layer, and a reference layer, a diode structure above and in electrical contact with the SOT-MRAM cell stack, an upper electrode disposed above and in electrical contact with the diode structure.

Abstract: A memory structure including a magnetic tunnel junction (MTJ) structure and a top electrode that are both formed without utilizing ion beam etching is provided. The MTJ structure, which includes a lower magnetic stack, a tunnel barrier layer and an upper magnetic stack, is pyramidal shaped, and end portions of the lower magnetic stack of the MTJ structure are devoid of the tunnel barrier layer and the upper magnetic stack.

Abstract: A spin-orbit torque magnetoresistive random-access memory device formed by forming an array of transistors, where a column of the array includes a source line contacting the source contact of each transistor of the column, forming a spin-orbit-torque (SOT) line contacting the drain contacts of the transistors of the row, and forming an array of unit cells, each unit cell including a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SOT line, where the SOT-MRAM cell stack includes a free layer, a tunnel junction layer, and a reference layer, a diode structure above and in electrical contact with the SOT-MRAM cell stack, an upper electrode disposed above and in electrical contact with the diode structure.

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the first magnetic free layer is composed of an ordered magnetic alloy. The ordered magnetic alloy provides a first magnetic free layer that has low moment, but is strongly magnetic. The use of such an ordered magnetic alloy first magnetic free layer in a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers.

Abstract: A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).

Abstract: A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a narrow base and the use of a spin diffusion layer (i.e., non-magnetic, spin-conducting metallic layer) which gives a low resistance-area product (RA) for the tunnel barrier layer that forms an interface with the spin diffusion layer.

Abstract: A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has a lower perpendicular magnetic anisotropy field, Hk, as compared with the first magnetic free layer. The multilayered magnetic free layer structure of the present application substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers. The lower Hk value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the second magnetic free layer and thus reduces, and even eliminates, write errors.

Abstract: A bottom pinned magnetic tunnel junction (MTJ) stack having improved switching performance is provided which can be used as a component/element of a spin-transfer torque magnetoresistive random access memory (STT MRAM) device. The improved switching performance which, in turn, can reduce write errors and improve write voltage distributions, is obtained by inserting at least one heavy metal-containing layer into the magnetic free layer and/or by forming a heavy metal-containing layer on a MTJ capping layer that is located above the magnetic free layer.

Abstract: A magnetic tunnel junction (MTJ) device includes a cylindrically-shaped pillar structure and a first ferromagnetic layer disposed on at least a portion of the pillar structure. The first ferromagnetic layer exhibits a magnetization that is changeable in the presence of at least one of an applied bias and heat. The MTJ device further includes a dielectric barrier disposed on at least a portion of the first ferromagnetic layer and a second ferromagnetic layer disposed on at least a portion of the dielectric barrier. The second ferromagnetic layer exhibits a magnetization that is fixed. The MTJ device is configured such that the first and second ferromagnetic layers and the dielectric barrier concentrically surround the pillar structure.

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer is composed of a M1/M2 superlattice structure or a M1/M2 multilayer structure, wherein M1 is a first magnetic metal selected from the group consisting of cobalt (Co), iron (Fe) and alloys thereof, and M2 is a second magnetic metal selected from the group consisting of platinum (Pt), palladium (Pd), nickel (Ni), rhodium (Rh), iridium (Jr), rhenium (Re) and alloys thereof.

Abstract: A bottom pinned magnetic tunnel junction (MTJ) stack having improved switching performance is provided which can be used as a component/element of a spin-transfer torque magnetoresistive random access memory (STT MRAM) device. The improved switching performance which, in turn, can reduce write errors and improve write voltage distributions, is obtained by inserting at least one heavy metal-containing layer into the magnetic free layer and/or by forming a heavy metal-containing layer on a MTJ capping layer that is located above the magnetic free layer.

Abstract: A magnetic tunnel junction (MTJ) device includes a cylindrically-shaped pillar structure and a first ferromagnetic layer disposed on at least a portion of the pillar structure. The first ferromagnetic layer exhibits a magnetization that is changeable in the presence of at least one of an applied bias and heat. The MTJ device further includes a dielectric barrier disposed on at least a portion of the first ferromagnetic layer and a second ferromagnetic layer disposed on at least a portion of the dielectric barrier. The second ferromagnetic layer exhibits a magnetization that is fixed. The MTJ device is configured such that the first and second ferromagnetic layers and the dielectric barrier concentrically surround the pillar structure.

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the first magnetic free layer is composed of an ordered magnetic alloy. The ordered magnetic alloy provides a first magnetic free layer that has low moment, but is strongly magnetic. The use of such an ordered magnetic alloy first magnetic free layer in a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers.

Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the first magnetic free layer is composed of an ordered magnetic alloy. The ordered magnetic alloy provides a first magnetic free layer that has low moment, but is strongly magnetic. The use of such an ordered magnetic alloy first magnetic free layer in a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers.