Abstract: A lossless data compressor of an aspect includes a first lossless data compressor circuitry coupled to receive input data. The first lossless data compressor circuitry is to apply a first lossless data compression approach to compress the input data to generate intermediate compressed data. The apparatus also includes a second lossless data compressor circuitry coupled with the first lossless data compressor circuitry to receive the intermediate compressed data. The second lossless data compressor circuitry is to apply a second lossless data compression approach to compress at least some of the intermediate compressed data to generate compressed data. The second lossless data compression approach different than the first lossless data compression approach. Lossless data decompressors are also disclosed, as are methods of lossless data compression and decompression.

Abstract: The present disclosure provides for use of variants of C-type natriuretic peptide (CNP), and novel pharmaceutical compositions and formulations comprising CNP variant peptides for the treatment of skeletal dysplasias, one or more symptoms of skeletal dysplasias, such as long bone growth or growth velocity, and other disorders having a skeletal dysplasia and/or CNP-associated symptom or component.

Abstract: A photonic module and a method of making same, the module having one or more optoelectronic chips, such as a laser diode typically having six sides, with each optoelectronic chip having two opposing sides (a first side and a second side) abutting and electrically connected to metal regions (preferably electro-formed), the two metal regions are physically distinct and electrically separate from each other, the two electro-formed metal regions serving, in use, as heat spreaders for conducting heat away from the optoelectronic chip.

Abstract: A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

Abstract: An optical waveguide structure comprises a nonlinear optical waveguide comprising a set of segments, a set of extension optical waveguides, and a set of wavelength selective couplers that couples light between set of segments in the nonlinear optical waveguide and the set of extension optical waveguides based on a wavelength of light.

Abstract: An optical waveguide structure comprises a nonlinear optical waveguide, a set of tuning optical waveguides, a set of wavelength selective couplers that couples light between the nonlinear optical waveguide and one or more tuning optical waveguides in the set of tuning optical waveguide based on a wavelength of light, and a set of phase shifters located along one or more tuning optical waveguides in the set of tuning optical waveguides.

Abstract: A method, apparatus, and system for non-linear optical process. A first light of a first wavelength is routed in a first loop in a main nonlinear optical waveguide. The first loop has a first length for the first light of the first wavelength. A second light of a second wavelength is routed in a second loop that includes portions of the main nonlinear optical waveguide and a first extension optical waveguide. The second loop has a second length for the second light of the second wavelength. A third light of a third wavelength is routed in a third loop that include portions of the main nonlinear optical waveguide and a second extension optical waveguide. The third loop has a third length for the third light of the third wavelength.

Abstract: An optical waveguide structure comprising a nonlinear optical waveguide, a central region, a first side region, and a second side region. The central region is located within the nonlinear optical waveguide, wherein the central region comprises a nonlinear optical material. The first side region is on a first side of the central region and the second side region is on a second side of the central region. The nonlinear optical material comprising the central region has a first nonlinear coefficient that is larger than a second nonlinear coefficient of a second material comprising the first side region and the second side region.

Abstract: An optical waveguide structure comprises a first coupler and a second coupler that, in combination, direct a first-wavelength light to travel through a nonlinear-optical waveguide, the two couplers and an extension waveguide but not a secondary waveguide, a first resonator loop is defined for which the first-wavelength light is resonant. The two couplers, in combination, also direct a second-wavelength light to travel through the nonlinear-optical waveguide, the two couplers and the secondary waveguide but not the extension waveguide, wherein a different second resonator loop is defined for which the second-wavelength light is resonant.

Abstract: An optical waveguide structure comprises a nonlinear optical waveguide comprising a nonlinear optical material having a second order nonlinear coefficient that changes with a direction of light propagation. A first portion of the nonlinear optical waveguide in which a light propagating through the first portion is affected by a positive value of a second order nonlinear coefficient. A second portion of the nonlinear optical waveguide in which the light propagating through the first portion is affected by a negative value of a second order nonlinear coefficient, wherein a set of dimensions in the nonlinear optical waveguide in the first portion and the second portion is selected to cause the light to have a phase walk-off that is an odd multiple of 180 degrees.

Abstract: A radio frequency (RF) link includes a link transmitter that includes a data modulator for modulating a data waveform together with an RF carrier, a photonic encoder coupled to the data modulator, and a transmitter antenna for transmitting an RF signal, wherein the RF signal comprises an output of the photonic encoder, and a link receiver including a receiver antenna for receiving the RF signal, a first laser source, a photonic limiter coupled to the first laser source and to the receiving antenna, a photonic decoder coupled to the photonic limiter, a photo-receiver coupled to the photonic decoder, and a demodulator coupled to the photo-receiver for demodulating an output of the photo-receiver with the RF carrier to form a data output.

Abstract: A method, apparatus, and system for forming a semiconductor structure. A first oxide layer located on a set of group III nitride layers formed on a silicon carbide substrate is bonded to a second oxide layer located on a carrier substrate to form an oxide layer located between the carrier substrate and the set of group III nitride layers. The silicon carbide substrate has a doped layer. The silicon carbide substrate having the doped layer is etched using a photo-electrochemical etching process, wherein a doping level of the doped layer is such that the doped layer is removed and a silicon carbide layer in the silicon carbide substrate remains unetched. The semiconductor structure is formed using the silicon carbide layer and the set of group III nitride layers.

Abstract: Systems, methods, and devices are disclosed for implementing photonic links. Methods include transmitting light using an optical emitter, splitting, using an input coupler, the light into a first path and a second path, the first path being provided to a modulator, and the second path being provided to a phase shifter, and combining, using an output coupler, an output of the modulator and an output of the phase shifter. Methods further include identifying a modulator phase angle that reduces a third order distortion at an output of the output coupler, applying a first bias voltage to a modulator to maintain the identified modulator phase angle, and applying a control signal to the phase shifter to maintain a phase difference between an output of the modulator and an output of a phase shifter.

Abstract: A method of forming a solder connection includes forming a solder mask on a thermal pad of a printed circuit board. The solder mask leaves unmasked portions of the thermal pad and forming the solder mask includes forming a plurality of mask stripes extending from edges of each unmasked portion towards a center of the unmasked portion. The method includes depositing solder paste on the unmasked portions of the thermal pad and placing an exposed thermal pad of an integrated circuit package on the solder paste deposited on the thermal pad of the printed circuit board. The method includes forming a solder connection by heating the solder paste between the unmasked portions of the thermal pad on the printed circuit board and the exposed thermal pad of the integrated circuit package.

Abstract: A method, apparatus, and system for non-linear optical process. A first light of a first wavelength is routed in a first loop in a main nonlinear optical waveguide. The first loop has a first length for the first light of the first wavelength. A second light of a second wavelength is routed in a second loop that includes portions of the main nonlinear optical waveguide and a first extension optical waveguide. The second loop has a second length for the second light of the second wavelength. A third light of a third wavelength is routed in a third loop that include portions of the main nonlinear optical waveguide and a second extension optical waveguide. The third loop has a third length for the third light of the third wavelength.

Abstract: An optical waveguide structure comprising a nonlinear optical waveguide, a central region, a first side region, and a second side region. The central region is located within the nonlinear optical waveguide, wherein the central region comprises a nonlinear optical material. The first side region is on a first side of the central region and the second side region is on a second side of the central region. The nonlinear optical material comprising the central region has a first nonlinear coefficient that is larger than a second nonlinear coefficient of a second material comprising the first side region and the second side region.

Abstract: An optical waveguide structure comprises a nonlinear optical waveguide comprising a nonlinear optical material having a second order nonlinear coefficient that changes with a direction of light propagation. A first portion of the nonlinear optical waveguide in which a light propagating through the first portion is affected by a positive value of a second order nonlinear coefficient. A second portion of the nonlinear optical waveguide in which the light propagating through the first portion is affected by a negative value of a second order nonlinear coefficient, wherein a set of dimensions in the nonlinear optical waveguide in the first portion and the second portion is selected to cause the light to have a phase walk-off that is an odd multiple of 180 degrees.

Abstract: An optical waveguide structure comprises a first coupler and a second coupler that, in combination, direct a first-wavelength light to travel through a nonlinear-optical waveguide, the two couplers and an extension waveguide but not a secondary waveguide, a first resonator loop is defined for which the first-wavelength light is resonant. The two couplers, in combination, also direct a second-wavelength light to travel through the nonlinear-optical waveguide, the two couplers and the secondary waveguide but not the extension waveguide, wherein a different second resonator loop is defined for which the second-wavelength light is resonant.

Abstract: An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.

Abstract: An infrared photo-detector array and a method for manufacturing it are disclosed. The infrared photo-detector array contains a plurality of pyramid-shaped structures, a first light-absorbing material supporting the plurality of the pyramid-shaped structure, a carrier-selective electronic barrier supporting the first light-absorbing material, a second light-absorbing material supporting the carrier-selective electronic barrier, and a metal reflector supporting the second light-absorbing material, wherein the plurality of the pyramid shaped structures are disposed on the side of the photo-detector array facing the incident light to be detected and the metal reflector is disposed on the opposite side of the photo-detector array. The method disclosed teaches how to manufacture the infrared photo-detector array.