Patents by Inventor Daniela White

Daniela White has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200071642
    Abstract: The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.
    Type: Application
    Filed: July 31, 2019
    Publication date: March 5, 2020
    Inventors: Elizabeth THOMAS, Michael WHITE, Daniela WHITE, Atanu Kumar DAS
  • Publication number: 20200024554
    Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.
    Type: Application
    Filed: July 18, 2019
    Publication date: January 23, 2020
    Inventors: Daniela WHITE, Elizabeth THOMAS, Jun LIU, Michael WHITE, Chao-Yu WANG, Donald FRYE
  • Publication number: 20190217255
    Abstract: A photodialysis device that can desalinate saline streams is described herein. The device can have a desalination rate that is significantly faster than current solar thermal desalination technology. Salt is removed from water by passing ionic current derived from sunlight through this water using dye-sensitized membranes. The device can serve as a distributed, low-cost technology that can efficiently and effectively desalinate low salinity sources of water, which is particularly useful for agriculture and drinking water applications.
    Type: Application
    Filed: March 27, 2019
    Publication date: July 18, 2019
    Inventors: Shane Ardo, Eric Schwartz, Jingyuan Liu, Joseph M. Cardon, William White, Kevin Tkacz, Lawrence A. Renna, Miguel A. Modestino, Daniela Blanco, Leanna Schulte, Rohit Bhide
  • Publication number: 20190177671
    Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.
    Type: Application
    Filed: March 9, 2017
    Publication date: June 13, 2019
    Inventors: Thomas PARSON, Shrane-Ning JENQ, Steven MEDD, Daniela WHITE, Michael WHITE, Donald FRYE
  • Publication number: 20190168265
    Abstract: Described are methods for removing abrasive particles from a polymeric surface, such as from a polymeric surface of a cleaning brush used in a post chemical-mechanical processing cleaning step, as well as related cleaning solutions.
    Type: Application
    Filed: October 26, 2018
    Publication date: June 6, 2019
    Inventor: Daniela WHITE
  • Publication number: 20190167061
    Abstract: The present invention teaches multilayer cleaning articles that include a substantially dry surface contact layer and a gripping layer. The contact layer may represent one exposed major face of the cleaning article (e.g., a cleaning pad), while the gripping layer may represent the opposite exposed major face of the cleaning article. The contact layer may include abrasive synthetic fibers, so as to be effective in scrubbing soils and spills from a surface. The contact layer includes a cleaning composition pre-loaded therein. The cleaning composition is such that the contact layer feels dry to the touch prior to use, before wetting with water. The cleaning composition may include about 1% to about 40% by weight water. The gripping layer includes at least 40% by weight of pulp fibers (e.g., natural cellulose pulp fiber), and exhibits a mean hand grip value that is at least 0.015 l/in2 (reciprocal inches squared).
    Type: Application
    Filed: January 17, 2019
    Publication date: June 6, 2019
    Inventors: Elisa Calimano, Daniela Fritter, Kristina Perlas, Jason White, Chosu Khin, Janiece Hope, Bernard Hill, Stephen Fisher, Kelly Dickson, William Ouellette
  • Patent number: 10138117
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: November 27, 2018
    Assignee: Entegris, Inc.
    Inventors: Li-Min Chen, Steven Lippy, Daniela White, Emanuel I. Cooper
  • Publication number: 20180291309
    Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.
    Type: Application
    Filed: April 11, 2018
    Publication date: October 11, 2018
    Inventors: Donald Frye, Jun Liu, Daniela White, Michael White
  • Publication number: 20180204736
    Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.
    Type: Application
    Filed: January 18, 2018
    Publication date: July 19, 2018
    Inventors: Daniela White, Thomas Parson, Michael White, Emmanuel I. Cooper, Atanu Das
  • Publication number: 20160185595
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
    Type: Application
    Filed: July 31, 2014
    Publication date: June 30, 2016
    Inventors: Li-Min CHEN, Steven LIPPY, Daniela WHITE, Enamuel I. COOPER
  • Publication number: 20150289548
    Abstract: Co-precipitates of a water insoluble food ingredient material and a hydrophilic polymer, and edible aqueous microdispersions of such co-precipitates are provided. The water insoluble food ingredient material may include rebaudioside D and the hydrophilic polymer may include carboxymethyl cellulose. Methods of making co-precipitates of a water insoluble food ingredient material and a hydrophilic polymer are provided.
    Type: Application
    Filed: October 28, 2013
    Publication date: October 15, 2015
    Inventors: Peter S. Given, Daniela White
  • Patent number: 8541310
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises (a) a catalytic oxidant comprising a water-soluble peroxometalate complex, an oxidizable precursor of a peroxometalate complex, or a combination thereof, (b) a particulate abrasive; and (c) an aqueous carrier. The peroxometalate complex and the precursor thereof each have a reduced form that is oxidizable by hydrogen peroxide to regenerate the peroxometalate complex during chemical-mechanical polishing. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.
    Type: Grant
    Filed: May 4, 2007
    Date of Patent: September 24, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, John Parker
  • Patent number: 8057561
    Abstract: The invention provides an isolated, particulate polyoxometalate complex comprising a water-soluble cationic polymer and a polyoxometalate compound ionically bound to the cationic polymer. The polyoxometalate compound can be an isopolyoxometalate compound, such as an isopolytungstate, or a heteropolyoxometalate compound. The invention further provides a chemical-mechanical polishing composition comprising a preformed polyoxometalate abrasive, as well as a method of chemically-mechanically polishing a substrate therewith.
    Type: Grant
    Filed: September 11, 2006
    Date of Patent: November 15, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, John Parker
  • Patent number: 8008202
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises a particulate abrasive (e.g., silica, alumina, and/or titania) suspended in an aqueous carrier containing a ruthenium-coordinating oxidized nitrogen ligand (N—O ligand), such as a nitroxide (e.g., 4-hydroxy-TEMPO). In the presence of the oxidizing agent, the N—O ligand prevents the deposition of ruthenium species having an oxidation state of IV or higher on the surface of the substrate, and concomitantly forms a soluble Ru(II) N—O coordination complex with oxidized ruthenium formed during CMP of the substrate. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: August 30, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, John Parker
  • Patent number: 7994057
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: August 9, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jeffrey Dysard, Sriram Anjur, Steven Grumbine, Daniela White, William Ward
  • Patent number: 7955520
    Abstract: The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.
    Type: Grant
    Filed: November 27, 2007
    Date of Patent: June 7, 2011
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, Jason Keleher, John Parker
  • Patent number: 7803711
    Abstract: The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure and (B) particles consisting of titanium dioxide having an anatase structure, wherein an x-ray diffraction pattern of the particles has a ratio of X/Y of about 0.5 or more, wherein X is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.24 ?, and Y is an intensity of a peak in an x-ray diffraction curve representing a d-spacing of about 3.51 ?, and water. The polishing component is moved relative to the substrate, and at least a portion of the substrate is abraded to polish the substrate.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: September 28, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Daniela White, John C. Parker
  • Publication number: 20090134122
    Abstract: The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.
    Type: Application
    Filed: November 27, 2007
    Publication date: May 28, 2009
    Inventors: Daniela White, Jason Keleher, John Parker
  • Publication number: 20090090696
    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, and zirconia, (b) a cationic copolymer comprising (A) a cationic monomer comprising a quaternary amino group and (B) a nonionic monomer, and (c) water. The invention also provides a method of polishing a substrate using the aforementioned polishing composition.
    Type: Application
    Filed: October 8, 2007
    Publication date: April 9, 2009
    Applicant: Cabot Microelectronics Corporation
    Inventors: Daniela White, John Parker
  • Publication number: 20090081871
    Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
    Type: Application
    Filed: September 19, 2008
    Publication date: March 26, 2009
    Applicant: Cabot Microelectronics Corporation
    Inventors: Jeffrey Dysard, Sriram Anjur, Steven Grumbine, Daniela White, William Ward