Abstract: A process for manufacturing semiconductor devices including a plurality of semiconductor layers arranged over a substrate, the semiconductor layers including at least one active layer. The process comprises the steps of vertically etching the plurality of semiconductor layers, the vertical etching including reactive ion etching of the semiconductor layers, and a subsequent regrowth of the laser structure in a regrowth reactor. The process includes the step of in-situ etching the laser structure in the regrowth reactor after the reactive ion-etching step. The process is effective in obtaining smooth planar and lateral surfaces for the regrowth step.

Abstract: The vapour generator for chemical vapour deposition plants allows the extraction of metalorganic vapours from liquid or solid sources. It mainly consists of a container into which a gas flows in, and as it passes near the reagent, it is saturated with the vapours produced and transports them to the reaction chamber. Only the generator is brought to a temperature which is higher than room temperature so as to obtain a vapour which is saturated with a high quantity of reagent. To avoid vapour condensation in the pipe system transporting it from the generator to the reaction chamber, it is diluted with a carrier gas directly in the body of the heated generator, reducing in this way the condensation temperature of vapour which becomes unsaturated. For this purpose, the generator contains a dilution bypass-line in the upper base into which the carrier gas is made to flow. The pipe system going from the generator to the reaction chamber can be held at room temperature without any condensation risks.

Abstract: The device for introducing reagents into an organometallic vapor phase deposition apparatus consists of a valve body having two chambers, each of which can be placed in communication with a passage for the introduction of the reagent and is permanently connected with two passages traversed by carrier gas.