Abstract: A process for the production of hydrogen comprises: a first steam reforming step of a feedstock containing hydrocarbons to obtain a first synthesis gas; a first synthesis gas shift and cooling step on the first synthesis gas; a separation step for separating the first synthesis gas into a high concentration hydrogen stream and a tail gas stream; a second low pressure steam reforming step performed on the tail gas to obtain a second synthesis gas; a second synthesis gas shift and cooling step on the second synthesis gas; a CO2 removal step performed on the stream of hydrogen and carbon dioxide exiting the second synthesis gas shift and cooling step in order to separate a CO2 stream from a fuel grade hydrogen stream; a step of feeding at least a part of the fuel grade hydrogen stream to the first steam reforming step.

Abstract: A method of indexing a plurality of dice obtained from a material wafer comprising a plurality of stacked material layers, each die being obtained in a respective die position in the wafer, the method including providing a visible index on each die indicative of the respective die position, wherein providing the visible index on each die includes: forming in a first material layer of the die a reference structure adapted to defining a mapping of the wafer; and forming in a second material layer of the die a marker associated with the reference structure, a position of the marker with respect to the reference structure being adapted to provide an indication of the die position in the wafer.

Abstract: The on resistance per unit area of integration of a DMOS structure is reduced beyond the technological limits of a mask that is defined based upon the continuity of a heavily doped superficial silicon region along the axis of the elongated source island openings through the polysilicon gate layer in the width direction of the integrated structure. The mask no longer needs to be defined with a width (in the pitch direction) sufficiently large to account for the overlay of two distinct and relatively critical masks. These two masks are the source implant mask and the body contacting plug diffusion implant contact opening mask.