Patents by Inventor DANIELE MENOSSI

DANIELE MENOSSI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220246786
    Abstract: The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSewTe1-w layer having a first amount w1 of selenium in it, forming a second CdSewTe1-w layer having a second amount w2 of selenium in it and forming a third CdSewTe1-w layer having a third amount w3 of selenium in it. The second amount w2 lies in the range between 0.25 and 0.4, whereas each of the amounts w1 and w3 lies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSewTe1-w layers is equal to or higher than 1.45 eV and the energy gap in the second CdSewTe1-w layer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSewTe1-w layers.
    Type: Application
    Filed: July 25, 2019
    Publication date: August 4, 2022
    Applicants: CHINA TRIUMPH INTERNATIONAL ENGINEERING CO., LTD., CTF SOLAR GMBH
    Inventors: SHOU PENG, XINJIAN YIN, GANHUA FU, DANIELE MENOSSI, MICHAEL HARR, BASTIAN SIEPCHEN