Abstract: Methods, systems, and devices for signal development circuitry layouts in a memory device are described. A memory device may include signal development circuitry that is positioned in multiple levels of a memory die relative to a substrate. For example, a set of first transistors used for developing access signals may be located on a first level of a memory die, and a set of second transistors used for developing the access signals may be located on a second level of the memory die. Formation of the set of first transistors and the set of second transistors may involve processing operations that are common with the formation of other transistors on a respective level, such as cell selection transistors, deck selection transistors, shunting transistors, and other transistors of the respective level.

Abstract: A memory device includes an array of memory cells including at least first and second memory cells. Each of the cells can be configured to store a charge at two or more non-zero charge levels. A first local amplifier circuit can be configured to provide, at a first amplifier output node and during a first read phase, a first comparison result based on a first cell voltage signal of the first memory cell and a first voltage reference signal, and to provide, during a second read phase, a second comparison result based on the first cell voltage signal and a second voltage reference signal. First and second latch circuits can be configured to store information about the first and second comparison results, respectively. In an example, information from the first and second memory cells can be used together to provide a 3-bit codeword.

Abstract: A typical DRAM stores gigabytes (GB) of data, with tens or hundreds of billions of memory cells. With so many cells, thousands or millions of cells exhibit operating characteristics that are multiple standard deviations from nominal. A sense amplifier receives as input the two differential bitlines of a DRAM column. Each of two portions of the sense amplifier handles a respective one of the bitlines, and the bitline signals are compared to generate the digital output of the sense amplifier. Variation between sense amplifiers may be expressed as a voltage offset in one or both portions. The voltage offset may be compensated for by biasing the comparison. As described herein, the voltage difference can be compensated for on one bitline. As a result, the variation in the voltage swing in different components is substantially reduced and read reliability is improved.

Abstract: A memory device includes first combinatory logic configured to receive multiple-digit representations of stored voltage values from each of N respective memory cells in a first memory array, and each of the memory cells is configured to store a charge having one of at least three different charge levels. The first combinatory logic can provide a first multiple-bit word, based on the received multiple-digit representations of the stored voltage values, and a number of bits in the first multiple-bit word is greater than N.

Abstract: Systems, methods, and apparatus are provided for memory device bleeder functionality. For example, some memory cells (e.g., dummy memory cells) within an array of memory cells can be configured as bleeder device, which can be selectively activated to discharge a (e.g., local) sense line to which memory cells of the array are coupled to and/or the memory cells.

Abstract: Techniques and configurations for electronic memory are described. An apparatus may include a first set of memory cells coupled with a first plate line and a word line, where a memory cell in the first set of memory cells may be coupled with a first bit line, and a second set of memory cells coupled with a second plate line and the word line, where a memory cell of the second set of memory cells may be coupled with a second bit line. The apparatus may also include a sense component having a first node coupled with the first bit line and a first capacitor and a second node coupled with the second bit line and a second capacitor. Also, a set of capacitors may be coupled with both nodes. The capacitors may support adjustment of the voltage of the nodes of the sense component.

Abstract: Systems and methods for sense amplifier power reduction are disclosed including controlling a supply voltage to a sense amplifier through different periods of operation, including providing a first supply voltage to the sense amplifier during an activation period and a second supply voltage to the sense amplifier lower than the first supply voltage during a precharge period to reduce power consumption of the sense amplifier. A voltage supply to a memory cell can be limited to the second supply during the precharge period to reduce a potential voltage stored at the memory cell, increasing memory cell retention.

Abstract: Devices and methods include a partially depleted silicon on insulator device that comprises a transistor. The transistor comprises a gate terminal. The transistor also includes a first non-gate terminal and a second non-gate terminal. Moreover, the first non-gate terminal is coupled to a body of the partially depleted silicon on insulator device.

Abstract: Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes conductive plates adjacent each other; memory cells associated with the conductive plates; drivers coupled to the conductive plates such that one of the drivers is associated with one of the conductive plates; and a short coupled between a first conductive plate of the conductive plate and a second conductive plate of the conductive plates.

Abstract: Systems and methods are related to a memory device including a plate line. The memory device also includes a pair of ferroelectric layers implementing a pair of memory cells and coupled to opposite sides of the plate line. The memory device further includes a pair of digit lines each coupled to a respective ferroelectric layer of the pair of ferroelectric layers. The memory device also includes a sense amplifier coupled to the pair of digit lines and configured to sense and amplify voltages received at the pair of digit lines from the respective memory cells. The sense amplifier includes a pair of inverters configured to selectively couple to the pair of digit lines and a pair of switches each configured to cause a respective inverter of the pair of inverters to function as a unity gain amplifier during a compensation phase of the memory device.

Abstract: Methods, systems, and devices for memory operations are described. First scrambling sequences may be generated for first addresses of a memory device after an occurrence of a first event, where the first addresses may be associated with commands received at the memory device. Portions of the memory array corresponding to the first address may be accessed based on the first scrambling sequences. After an occurrence of a subsequent event, second scrambling sequences may be generated for the first addresses, where the second scrambling sequences may be different than the first set of scrambling sequences. After the occurrence of the subsequent event, the portions of the memory array may be accessed based on the second scrambling sequences.

Abstract: Methods, systems, and devices for data masking for memory are described. A memory device may set multiple data masking flags for associated memory array(s) at power-up. Each data masking flag may be associated with a respective page of memory cells and may indicate whether the data stored in the respective page is masked data, or whether the data is new, unmasked data. Data existing at a previous power-down may be masked until an initial write or activate command has been performed on the page after power-up, where the initial write or activate command may result in writing masked data, write data, or a combination thereof to the page. After previously stored data is overwritten to a page, the flag associated with the page may be reset, which may indicate that data stored at the page is available to be read.

Abstract: Methods, systems, and devices for an enhanced sense amplifier architecture are described. An architecture of p-type transistors in a sense amplifier may be modified to support greater accuracy of voltage sensing operations in a memory system. A shape and/or a positioning of one or more channel portions of a p-type transistor, relative to one or more gate portions of the p-type transistor, may increase an effective channel length of the p-type transistor, which may support an increased accuracy of cell voltage sensing. In some examples, a channel portion of the p-type transistor may have a non-rectangular shape to support a relatively longer electrical path between a source and a drain of the p-type transistor. In some examples, a shape of a gate portion of the p-type transistor may have a non-rectangular shape to support a relatively longer path between the source and the drain.

Abstract: Systems and methods related to a memory device that includes a command interface configured to receive read commands and write commands to invoke read and write operations. The memory device also includes a memory bank having multiple memory cells implemented using ferroelectric layers between plate lines and digit lines. The memory device also includes bank control circuitry configured to control operation of the memory bank. The operation of the memory bank includes programming both high and low logic values as a write back to the multiple memory cells during a read and write phase where the read and write operations are performed after sensing values from the multiple memory cells.

Abstract: Methods, systems, and devices for storing bits, such as N?1 bits, with cells, such as N cells, in a memory device are described. A memory device may generate a first sensing voltage that is based on a first voltage of a first digit line and a second voltage of a second digit line. The memory device may also generate a second sensing voltage that is based on a third voltage of a third digit line and a fourth voltage of a fourth digit line. The memory device may then determine a bit value based at least in part on a difference between the first sensing voltage and the second sensing voltage.

Abstract: Systems and methods related to a memory device that includes a command interface configured to receive read commands and write commands to invoke read and write operations. The memory device also includes a memory bank having multiple memory cells implemented using ferroelectric layers between plate lines and digit lines. The memory device also includes bank control circuitry configured to control operation of the memory bank. The operation of the memory bank includes programming both high and low logic values as a write back to the multiple memory cells during a read and write phase where the read and write operations are performed after sensing values from the multiple memory cells.

Abstract: Methods, systems, and devices for memory operations are described. First scrambling sequences may be generated for first addresses of a memory device after an occurrence of a first event, where the first addresses may be associated with commands received at the memory device. Portions of the memory array corresponding to the first address may be accessed based on the first scrambling sequences. After an occurrence of a subsequent event, second scrambling sequences may be generated for the first addresses, where the second scrambling sequences may be different than the first set of scrambling sequences. After the occurrence of the subsequent event, the portions of the memory array may be accessed based on the second scrambling sequences.

Abstract: Methods, systems, and devices for storing bits, such as N?1 bits, with cells, such as N cells, in a memory device are described. A memory device may generate a first sensing voltage that is based on a first voltage of a first digit line and a second voltage of a second digit line. The memory device may also generate a second sensing voltage that is based on a third voltage of a third digit line and a fourth voltage of a fourth digit line. The memory device may then determine a bit value based at least in part on a difference between the first sensing voltage and the second sensing voltage.

Abstract: Systems and methods are related to a memory device including a plate line. The memory device also includes a pair of ferroelectric layers implementing a pair of memory cells and coupled to opposite sides of the plate line. The memory device further includes a pair of digit lines each coupled to a respective ferroelectric layer of the pair of ferroelectric layers. The memory device also includes a sense amplifier coupled to the pair of digit lines and configured to sense and amplify voltages received at the digit lines from the respective memory cells. The sense amplifier includes a threshold voltage compensated latch that includes multiple p-channel transistors and is configured to compensate for process, voltage, or temperature variation mismatches between the threshold voltages of the multiple p-channel transistors.

Abstract: Methods, systems, and devices for sense amplifier with digit line multiplexing are described. A method includes precharging an input and an output of an amplifier stage of a sense component to a first voltage based on a read operation associated with a memory cell. The method includes precharging a first side and a second side of a latch stage of the sense component to the first voltage based on precharging the output of the amplifier stage to the first voltage, the latch stage coupled with the amplifier stage. The method may also include coupling a second voltage from a digit line associated with the memory cell to the input of the amplifier stage, the amplifier stage generating a third voltage on the output based on coupling the second voltage to the input, and the latch stage latching a logic value associated with the memory cell based on the third voltage.