Abstract: A vacuum treatment apparatus for substrate including a vacuum treatment arrangement. An input load-lock arrangement leads towards and into the vacuum treatment arrangement and an output load-lock arrangement leads from the vacuum treatment arrangement. One of the two load-lock arrangements includes at least two load-locks in series respectively pumped by pumps.

Abstract: So as to perform a vacuum surface treatment on a workpiece at a predetermined temperature, which is different from a temperature to which the surface is exposed during the vacuum surface treatment, the workpiece is conveyed in a conveyance direction along one or more than one station group including one or more than one tempering station and of a single treatment station.

Abstract: A vacuum treatment apparatus for substrate including a vacuum treatment arrangement. An input load-lock arrangement leads towards and into the vacuum treatment arrangement and an output load-lock arrangement leads from the vacuum treatment arrangement. One of the two load-lock arrangements includes at least two load-locks in series respectively pumped by pumps.

Abstract: This disclosure relates to plasma processing for photovoltaic device manufacturing. Particularly to a plasma processing system that includes an electrode that allows gas to pass through into the process chamber that includes a substrate. A gas barrier component may be used to minimize parasitic plasma occurring at the edges of the electrode by preventing process gas reaching the edge of the chamber or from entering the process chamber by going around the electrode. The gas barrier component may be made of a non-conductive flexible material that forms a fluidic seal between the electrode and the chamber. In other embodiments, the gas barrier may also support isolation grids that are disposed opposite of the electrode and prevent the isolation grids from moving.

Abstract: A plasma reactor (1) for treating a substrate (40), comprises at least two electrodes (20, 30) arranged within the reactor (1) defining an internal process space (13) there between, whereas the two electrodes (20, 30) are located opposed to each other and parallel with respect to a first surface (20a) of the electrodes (20, 30). Further it comprises a gas inlet (11) and a gas outlet (12) for transporting gas in and out of the plasma reactor (1), a radiofrequency generator (21) connected to at least one of the electrodes (20, 30).

Abstract: A plasma reactor (1) for treating a substrate (40), comprises at least two electrodes (20, 30) arranged within the reactor (1) defining an internal process space (13) there between, whereas the two electrodes (20, 30) are located opposed to each other and parallel with respect to a first surface (20a) of the electrodes (20, 30). Further it comprises a gas inlet (11) and a gas outlet (12) for transporting gas in and out of the plasma reactor (1), a radiofrequency generator (21) connected to at least one of the electrodes (20, 30).