Patents by Inventor Danielle L. DeGraw

Danielle L. DeGraw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming features on a substrate having varying feature densities
    Patent number: 8629063
    Abstract: A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material to expose portions of the substrate using a planarizing process, and removing residual portions of the conductive material disposed on the substrate using a reactive ion etch (RIE) process.
    Type: Grant
    Filed: June 8, 2011
    Date of Patent: January 14, 2014
    Assignee: International Business Machines Corporation
    Inventors: Danielle L. DeGraw, Candace A. Sullivan
  • Forming Features on a Substrate Having Varying Feature Densities
    Publication number: 20120313250
    Abstract: A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material to expose portions of the substrate using a planarizing process, and removing residual portions of the conductive material disposed on the substrate using a reactive ion etch (RIE) process.
    Type: Application
    Filed: June 8, 2011
    Publication date: December 13, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Danielle L. DeGraw, Candace A. Sullivan
  • Metal adhesion by induced surface roughness
    Patent number: 8039314
    Abstract: Back side metal (BSM) delamination induced by chip dicing of silicon wafers is avoided by roughening the polished silicon surface at chip edges by etching. The Thru-Silicon-Via (TSV) structures used in 3D chip integration is masked at the back side from roughening to maintain the polished surface at the TSV structures and, thus, reliable conductivity to the BSM layer.
    Type: Grant
    Filed: August 4, 2008
    Date of Patent: October 18, 2011
    Assignee: International Business Machines Corporation
    Inventors: Danielle L. DeGraw, Peter James Lindgren, Da-Yuan Shih, Ping-Chuan Wang
  • METAL ADHESION BY INDUCED SURFACE ROUGHNESS
    Publication number: 20100025825
    Abstract: Back side metal (BSM) delamination induced by chip dicing of silicon wafers is avoided by roughening the polished silicon surface at chip edges by etching. The Thru-Silicon-Via (TSV) structures used in 3D chip integration is masked at the back side from roughening to maintain the polished surface at the TSV structures and, thus, reliable conductivity to the BSM layer.
    Type: Application
    Filed: August 4, 2008
    Publication date: February 4, 2010
    Inventors: Danielle L. DeGraw, Peter James Lindgren, Da-Yuan Shih, Ping-Chuan Wang