Abstract: A precursor gas mixture for depositing an epitaxial carbon-doped silicon film is described. The precursor gas mixture is comprised of a volume of a silicon precursor gas, a volume of acetylene gas and a volume of a carrier gas. A method of forming a semiconductor structure having an epitaxial carbon-doped silicon film is also described. In the method, a substrate having a high polarity dielectric region and a low polarity crystalline region is provided. A precursor gas is flowed to provide a silyl surface above the high polarity dielectric region and a carbon-doped silicon layer above the low polarity crystalline region. The silyl surface is then removed from above the high polarity dielectric region. The flowing and removing steps are repeated to provide a carbon-doped silicon film of a desired thickness above the low polarity crystalline region.

Abstract: A precursor gas mixture for depositing an epitaxial carbon-doped silicon film is described. The precursor gas mixture is comprised of a volume of a silicon precursor gas, a volume of acetylene gas and a volume of a carrier gas. A method of forming a semiconductor structure having an epitaxial carbon-doped silicon film is also described. In the method, a substrate having a high polarity dielectric region and a low polarity crystalline region is provided. A precursor gas is flowed to provide a silyl surface above the high polarity dielectric region and a carbon-doped silicon layer above the low polarity crystalline region. The silyl surface is then removed from above the high polarity dielectric region. The flowing and removing steps are repeated to provide a carbon-doped silicon film of a desired thickness above the low polarity crystalline region.