Patents by Inventor Danielle Mauri

Danielle Mauri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a magnetic head including a read sensor
    Patent number: 7650684
    Abstract: A method for fabricating a magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. The method includes the plasma smoothing of the upper surface of the pinned magnetic layer prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.
    Type: Grant
    Filed: July 16, 2004
    Date of Patent: January 26, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wen-Yaung Lee, Tsann Lin, Danielle Mauri, Alexander Michael Zeltser
  • Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures
    Patent number: 6937448
    Abstract: A magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. Plasma smoothing of the upper surface of the pinned magnetic layer is conducted prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: August 30, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Wen-Yaung Lee, Tsann Lin, Danielle Mauri, Alexander Michael Zeltser
  • Enhanced GMR magnetic head signal through pinned magnetic layer plasma smoothing
    Publication number: 20040264070
    Abstract: A magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. Plasma smoothing of the upper surface of the pinned magnetic layer is conducted prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.
    Type: Application
    Filed: July 16, 2004
    Publication date: December 30, 2004
    Inventors: Wen-Yaung Lee, Tsann Lin, Danielle Mauri, Alexander Michael Zeltser
  • Enhanced GMR magnetic head signal through pinned magnetic layer plasma smoothing
    Publication number: 20040090717
    Abstract: A magnetic head including a spin valve sensor having a sensor layer stack that includes a pinned magnetic layer, a spacer layer formed on the pinned magnetic layer, and a free magnetic layer formed on the spacer layer. In a preferred embodiment the spacer layer is comprised of CuOx. Plasma smoothing of the upper surface of the pinned magnetic layer is conducted prior to depositing the spacer layer, and a preferred plasma gas is a mixture of argon and oxygen.
    Type: Application
    Filed: November 13, 2002
    Publication date: May 13, 2004
    Inventors: Wen-Yaung Lee, Tsann Lin, Danielle Mauri, Alexander Michael Zeltser
  • Self-biased spin valve sensor
    Patent number: 5796561
    Abstract: A self-biased spin valve (SV) magnetoresistive (MR) sensor is disclosed having a free layer separated from a pinned layer by a spacer1 layer and further having the free layer separated from a keeper layer by a spacer2 layer. The free layer being disposed between the keeper layer and the pinned layer. The keeper layer in combination with the sense current flowing in the sensor is used as a means of pinning the magnetization of the pinned layer. By using the soft keeper layer in combination with the sense current as a means of pinning the pinned layer magnetization as opposed to the use of the conventional antiferromagnetic layer, the SV sensor dependency on the blocking temperature of the antiferromagnetic layer is eliminated.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: August 18, 1998
    Assignee: International Business Machines Corporation
    Inventor: Danielle Mauri