Abstract: A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer rests on a planar surface at least above and in the vicinity of the lower electrode.

Abstract: A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer rests on a planar surface at least above and in the vicinity of the lower electrode.

Abstract: A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer rests on a planar surface at least above and in the vicinity of the lower electrode.

Abstract: Sensor cells are arranged in an array in an organic semiconductor layer. Row and column select circuitry addresses the cells of the array one cell at a time to determine the presence of an object, such as a fingerprint ridge or valley, contacting or proximate to a sensing surface above each cell. Control circuitry can be provided in a companion silicon chip or in a second layer of organic semiconductor material to communicate with the array and an associated system processor. The array of sensor cells can be fabricated using a flexible polymer substrate that is peeled off and disposed of after contacts have been patterned on the organic semiconductor layer. The organic semiconductor layer can be used with a superimposed reactive interface layer to detect specific chemical substances in a test medium.

Abstract: A system and method is disclosed for providing a redistribution metal layer in an integrated circuit. The redistribution metal layer is formed from the last metal layer in the integrated circuit during manufacture of the integrated circuit before final passivation is applied. The last metal layer provides sites for solder bump pads used in flip chip interconnection. The redistribution metal layer can be (1) a flat layer deposited over the next to last metal layer through an opening in a dielectric layer, or (2) deposited over an array of vias connected to the next to last metal layer. Space between the solder bump pads is deposited with narrower traces for connecting active circuit areas below. A final passivation layer is deposited to ensure product reliability.

Abstract: A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer rests on a planar surface at least above and in the vicinity of the lower electrode.

Abstract: A large diameter glass wafer is pattern-etched to provide a plurality of elongated lens elements arranged side-by-side, the etching leaving small rods in place to keep the lens elements connected to the wafer during mirror processing. The etching provides curved surfaces for lenses and flat surfaces for mirrors. The mirrors are formed by selectively depositing reflective material on the flat surfaces. The reflective material may comprise an oxide, nitride, sulfide, or fluoride of a transition metal. The flat surfaces that define the mirrors are disposed at angles to the longitudinal dimension of each lens element. In use in an optical disc system, light from a laser diode is reflected by the mirrors and directed at an optical disc through a first lens. Light returns from the disc on a parallel path through a second lens, passes through the lens element, and is directed at a photodetector. The system may include an elongated base element attached to each lens element.

Abstract: Sensor cells are arranged in an array in an organic semiconductor layer. Row and column select circuitry addresses the cells of the array one cell at a time to determine the presence of an object, such as a fingerprint ridge or valley, contacting or proximate to a sensing surface above each cell. Control circuitry can be provided in a companion silicon chip or in a second layer of organic semiconductor material to communicate with the array and an associated system processor. The array of sensor cells can be fabricated using a flexible polymer substrate that is peeled off and disposed of after contacts have been patterned on the organic semiconductor layer. The organic semiconductor layer can be used with a superimposed reactive interface layer to detect specific chemical substances in a test medium.