Patents by Inventor Daniil M. Lukin

Daniil M. Lukin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-carbide-on-insulator via photoelectrochemical etching
    Patent number: 11996285
    Abstract: Silicon carbide on insulator is provided by bonding bulk silicon carbide to a substrate with an oxide-oxide fusion bond, followed by thinning the bulk silicon carbide as needed. A doping-selective etch for silicon carbide is used to improve thickness uniformity of the silicon carbide layer(s).
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: May 28, 2024
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Daniil M. Lukin, Jelena Vuckovic
  • Chip-integrated Titanium:Sapphire Laser
    Publication number: 20220278497
    Abstract: An integrated Ti:Sapphire laser device includes a substrate [100], a first waveguide resonator [102] composed of a gain medium integrated onto the substrate in a planar technology configuration, a frequency doubler [104] composed of a second order nonlinear material integrated onto the substrate in a planar technology configuration, and a second waveguide resonator [106] composed of a titanium doped sapphire gain medium integrated onto the substrate in a planar technology configuration.
    Type: Application
    Filed: July 31, 2020
    Publication date: September 1, 2022
    Inventors: Geun Ho Ahn, Daniil M. Lukin, Melissa Guidry, Jelena Vuckovic, Kiyoul Yang
  • Silicon-Carbide-on-Insulator via photoelectrochemical etching
    Publication number: 20210398804
    Abstract: Silicon carbide on insulator is provided by bonding bulk silicon carbide to a substrate with an oxide-oxide fusion bond, followed by thinning the bulk silicon carbide as needed. A doping-selective etch for silicon carbide is used to improve thickness uniformity of the silicon carbide layer(s).
    Type: Application
    Filed: September 3, 2021
    Publication date: December 23, 2021
    Inventors: Daniil M. Lukin, Jelena Vuckovic
  • Silicon-Carbide-on-Insulator (SiCOI)
    Publication number: 20200279767
    Abstract: Silicon carbide on insulator is provided by bonding bulk silicon carbide to a substrate with an oxide-oxide fusion bond, followed by thinning the bulk silicon carbide as needed.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 3, 2020
    Inventors: Daniil M. Lukin, Constantin Dory, Jelena Vuckovic