Abstract: The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a

Abstract: The reactor (100) for deposition of layers of semiconductor material on substrates, comprises: a reaction chamber (110), a susceptor assembly (120) located inside the reaction chamber, and a heating system (130) adapted to heat the susceptor assembly by electromagnetic induction; the heating system (130) comprises a first (131) inductor and a second (132) inductor and a power supply (135) adapted to electrically feed the first and second inductors (131, 132) with alternating currents that are distinct and independent from one another; the reactor (100) further comprises a shielding assembly (140) adapted to limit electromagnetic coupling between the first and the second inductors (131, 132).

Abstract: The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

Abstract: The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

Abstract: A reaction chamber of a reactor for epitaxial growth includes a wall (1) with a recess and a susceptor (7) comprising a body and a relief. The body is placed in said recess in a rotational manner with respect to said wall (1). The chamber includes a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth. The chamber also includes a flat covering (91, 92) located over said wall (1) and a hole (10) at said discoid supporting element (8). The shape of said hole (10) corresponds to the shape of said discoid supporting element (8). The covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

Abstract: A reaction chamber of a reactor for epitaxial growth comprises:—a wall (1) with a recess,—a susceptor (7) comprising a body and a relief, wherein said body is placed in said recess in rotational manner with respect to said wall (1),—a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth, and—a flat covering (91, 92) located over said wall (1) and a having hole (10) at said discoid supporting element (8); wherein the shape of said hole (10) corresponds to the shape of said discoid supporting element (8); wherein said covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

Abstract: The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

Abstract: The present invention relates to a reaction chamber (1) for an epitaxial reactor, provided with walls delimiting an inner cavity (10), specifically a lower wall (3) and an upper wall (2) and at least two side walls (4,5); the lower wall (3) and the upper wall (2) have different configurations and/or are made of different materials; this allows the lower wall (3) to be heated to a higher temperature than the upper wall (2). The present invention also relates to a method for heating a reaction chamber.

Abstract: The present invention relates to a reactor (1) for growing crystals of a material, in particular of silicon carbide or a third-group nitride; it comprises a chamber (2) divided into a first zone (21) and a second zone (22), said division being accomplished through a dividing wall (3) having at least one opening (31) which puts said first and second zones (21,22) in communication with each other, injection means (41,42) adapted to supply said first zone (21) with at least one precursor gas of said material, exhaust means (5) adapted to discharge exhaust gases from said second zone (22), support means (6) located in said second zone (22) and adapted to support a growing crystal, and heating means (71,72) adapted to keep said first and second zones (21,22) at a temperature between 2000° C. and 2600° C.

Abstract: The process according to the present invention is adapted to produce a silicon carbide substrate for microelectronic applications; it comprises the following steps: a) providing a conductive silicon carbide wafer, and b) growing an epitaxial layer of intrinsic silicon carbide on said wafer.

Abstract: The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity (1) which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (2), by a lower wall (3), by a right-hand side wall (4), and by a left-hand side wall (5); the upper wall (2) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall (3) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall (4) is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall (5) is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall (2) is thus electrically well i

Abstract: The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber (1) delimited by at least two walls and with at least one heating solenoid (9); the susceptor system comprises at least one susceptor element (2, 3) delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element (2, 3) is hollow; a first portion of the outer surface of the susceptor element (2, 3) is suitable for acting as a wall of the treatment chamber (1); a second portion of the outer surface of the susceptor element (2, 3) is suitable for being disposed close to the heating solenoid (9).

Abstract: The present invention relates to a system for supporting and rotating a susceptor within the treatment chamber of a wafer treatment apparatus comprising a support member (2) placed inside the treatment chamber and capable of supporting a susceptor (3), means (4) capable of lifting the support member (2) via a lifting gas flow, and means (5) capable of rotating the support member (2) via a rotation gas flow.

Abstract: The present invention relates to a susceptor (3) for epitaxial reactors, comprising a body (31) provided typically with at least one recess (311) for housing substrates on which epitaxial growth is performed; the susceptor (3) comprises a projecting part (32) able to be gripped by a tool (9) so as to be introduced into and extracted from a reaction chamber (12) of an epitaxial reactor.

Abstract: A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.

Abstract: The present invention relates to a process for cleaning the reaction chamber (12) of a CVD reactor, comprising the steps of heating the chamber walls to a suitable temperature and introducing a gas flow into the chamber, this cleaning process may be advantageously used within an operating process of a CVD reactor for depositing semiconductor material onto substrates inside a chamber; this operating process envisages a growth process comprising the sequential and cyclical loading of the substrates into the chamber (12), deposition of semiconductor material onto the substrates and unloading of the substrates from the chamber (12); after unloading a process for cleaning the chamber (12) is performed. The invention also relates to process for cleaning the entire CVD reactor, which envisages, together with heating, the presence of chemical etching components in the gas flow.

Abstract: A system for growing silicon carbide crystals on substrates is described and comprises a chamber (1) which extends along an axis, wherein the chamber (1) has separate input means (2, ;) for gases containing carbon and for gases containing silicon, substrate support means (4) disposed in a first end zone (ZI) of the chambe, exhaust output means (5) disposed in the vicinity of the support means (4), and heating means adapted for beating the chamber (1) to a temperature greater than 1800° C.?; the input means (2) for gases containing silicon are positioned, shaped and dimensioned in a manner such that the gases containing silicon enter in a second end zone (Z2) of the chamber; the input means (3) for gases containing carbon are positioned shaped and dimensioned in a manner such that the carbon and tire silicon come substantially into contact in a central zone (ZC) of the chamber remote both from the first end zone (ZI) and from the second end zone (Z2).

Abstract: A support system (1) for an apparatus of the type able to treat substrates and/or wafers is described, said system comprising a fixed base element (10) having a substantially flat surface in which a substantially cylindrical seat (11) with a substantially flat bottom is formed, and a movable support element (20) having a substantially disc-shaped form, being housed inside the seat (11), being able to rotate about the axis of the seat (11) and having a substantially flat upper side provided with at least one cavity (21) for a substrate or wafer and a substantially flat bottom side; one or more passages (12) for one or more gas flows are provided, which passages (12) emerge inside the seat (11) in directions which are inclined and preferably skew with respect to its axis, in such a way as to lift and rotate the support element (20).

Abstract: The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity (1) which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (2), by a lower wall (3), by a right-hand side wall (4), and by a left-hand side wall (5); the upper wall (2) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall (3) is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall (4) is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall (5) is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall (2) is thus electrically well i

Abstract: The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber (1) delimited by at least two walls and with at least one heating solenoid (9); the susceptor system comprises at least one susceptor element (2, 3) delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element (2, 3) is hollow; a first portion of the outer surface of the susceptor element (2, 3) is suitable for acting as a wall of the treatment chamber (1); a second portion of the outer surface of the susceptor element (2, 3) is suitable for being disposed close to the heating solenoid (9).