Abstract: Hall sensing signals are received in a spinning readout pattern of subsequent readout phases, wherein the pattern is cyclically repeated at a spinning frequency and a polarity of the Hall sensor signals is reversed in two non-adjacent readout phases of the readout pattern. A signal storage circuit includes signal storage capacitors. An accumulation circuit includes accumulation capacitors. A switch network is selectively actuated to couple the signal storage capacitors with the accumulation capacitors synchronously with phases in the spinning readout pattern in subsequent alternating first and second periods. The spinning output is stored with alternating opposite signs on the signal storage capacitors and the Hall sensing signals are stored in the signal storage capacitors and then accumulated on the accumulation capacitors with alternate signs in subsequent periods. The accumulated output signal is then demodulated with a demodulation frequency half the spinning frequency.

Abstract: Hall sensing signals are received in a spinning readout pattern of subsequent readout phases, wherein the pattern is cyclically repeated at a spinning frequency and a polarity of the Hall sensor signals is reversed in two non-adjacent readout phases of the readout pattern. A signal storage circuit includes signal storage capacitors. An accumulation circuit includes accumulation capacitors. A switch network is selectively actuated to couple the signal storage capacitors with the accumulation capacitors synchronously with phases in the spinning readout pattern in subsequent alternating first and second periods. The spinning output is stored with alternating opposite signs on the signal storage capacitors and the Hall sensing signals are stored in the signal storage capacitors and then accumulated on the accumulation capacitors with alternate signs in subsequent periods. The accumulated output signal is then demodulated with a demodulation frequency half the spinning frequency.

Abstract: A compensation circuit receives a sensing signal from a Hall sensor and outputs a compensated Hall sensing signal. The compensation circuit has a gain that is inversely proportional to Hall sensor drift mobility. The compensated Hall sensing signal is temperature-compensated.

Abstract: An integrated sensor device including a first die, housing a sensor element to detect a quantity external to the sensor device and transduce the external quantity into an electrical sensing signal; a second die mechanically coupled to the first die so that the first and second dies are stacked on one another along one and the same axis; and at least one heater of a resistive type integrated in the first die and/or in the second die, having a first conduction terminal and a second conduction terminal configured to couple respective first and second conduction terminals of a signal generator for causing an electric current to flow, in use, between the first and second conduction terminals of the heater and generate heat by the Joule effect. It is possible to carry out calibration in temperature of the sensor element.

Abstract: A differential current conveyor circuit includes two or more single-ended current conveyor stages and a common bias stage. First and second switches are set between the control terminals of the transistors in the common bias stage and a respective one of a first and a second coupling line of the single ended stages can be switched between the following: a reset state of the circuit with the transistors in the common bias stage coupled to the first and second coupling lines with the single-ended stages set to a bias condition; and a sensing state of the circuit with the transistors in the common bias stage decoupled from the first and second coupling lines, with the single-ended stages in a high impedance state with the control terminals of the input transistors of the single ended stages capacitively coupled to the input terminal.

Abstract: A circuit includes a first transistor having a control terminal and a current path between first and second current path terminals. A second transistor has a control terminal and a current path between first and second current path terminals. The first current path terminal of the first transistor is coupled to the first current path terminal of the second transistor at an intermediate point. A first current buffer has an input and an output. The input of the first current buffer is coupled to the second current path terminal of the first transistor. A second current buffer has an input and an output, the input of the second current buffer being coupled to the second current path terminal of the second transistor. A summation node is coupled to the outputs of the first and second current buffer.

Abstract: A compensation circuit receives a sensing signal from a Hall sensor and outputs a compensated Hall sensing signal. The compensation circuit has a gain that is inversely proportional to Hall sensor drift mobility. The compensated Hall sensing signal is temperature-compensated.

Abstract: Hall sensing signals are received in a spinning readout pattern of subsequent readout phases, wherein the pattern is cyclically repeated at a spinning frequency and a polarity of the Hall sensor signals is reversed in two non-adjacent readout phases of the readout pattern. A signal storage circuit includes signal storage capacitors. An accumulation circuit includes accumulation capacitors. A switch network is selectively actuated to couple the signal storage capacitors with the accumulation capacitors synchronously with phases in the spinning readout pattern in subsequent alternating first and second periods. The spinning output is stored with alternating opposite signs on the signal storage capacitors and the Hall sensing signals are stored in the signal storage capacitors and then accumulated on the accumulation capacitors with alternate signs in subsequent periods. The accumulated output signal is then demodulated with a demodulation frequency half the spinning frequency.

Abstract: An integrated sensor device including a first die, housing a sensor element to detect a quantity external to the sensor device and transduce the external quantity into an electrical sensing signal; a second die mechanically coupled to the first die so that the first and second dies are stacked on one another along one and the same axis; and at least one heater of a resistive type integrated in the first die and/or in the second die, having a first conduction terminal and a second conduction terminal configured to couple respective first and second conduction terminals of a signal generator for causing an electric current to flow, in use, between the first and second conduction terminals of the heater and generate heat by the Joule effect. It is possible to carry out calibration in temperature of the sensor element.

Abstract: A circuit includes a first transistor having a control terminal and a current path between first and second current path terminals. A second transistor has a control terminal and a current path between first and second current path terminals. The first current path terminal of the first transistor is coupled to the first current path terminal of the second transistor at an intermediate point. A first current buffer has an input and an output. The input of the first current buffer is coupled to the second current path terminal of the first transistor. A second current buffer has an input and an output, the input of the second current buffer being coupled to the second current path terminal of the second transistor. A summation node is coupled to the outputs of the first and second current buffer.

Abstract: A differential current conveyor circuit includes two or more single-ended current conveyor stages and a common bias stage. First and second switches are set between the control terminals of the transistors in the common bias stage and a respective one of a first and a second coupling line of the single ended stages can be switched between the following: a reset state of the circuit with the transistors in the common bias stage coupled to the first and second coupling lines with the single-ended stages set to a bias condition; and a sensing state of the circuit with the transistors in the common bias stage decoupled from the first and second coupling lines, with the single-ended stages in a high impedance state with the control terminals of the input transistors of the single ended stages capacitively coupled to the input terminal.

Abstract: An integrated sensor device including a first die, housing a sensor element to detect a quantity external to the sensor device and transduce the external quantity into an electrical sensing signal; a second die mechanically coupled to the first die so that the first and second dies are stacked on one another along one and the same axis; and at least one heater of a resistive type integrated in the first die and/or in the second die, having a first conduction terminal and a second conduction terminal configured to couple respective first and second conduction terminals of a signal generator for causing an electric current to flow, in use, between the first and second conduction terminals of the heater and generate heat by the Joule effect. It is possible to carry out calibration in temperature of the sensor element.

Abstract: An integrated sensor device including a first die, housing a sensor element to detect a quantity external to the sensor device and transduce the external quantity into an electrical sensing signal; a second die mechanically coupled to the first die so that the first and second dies are stacked on one another along one and the same axis; and at least one heater of a resistive type integrated in the first die and/or in the second die, having a first conduction terminal and a second conduction terminal configured to couple respective first and second conduction terminals of a signal generator for causing an electric current to flow, in use, between the first and second conduction terminals of the heater and generate heat by the Joule effect. It is possible to carry out calibration in temperature of the sensor element.