Patents by Inventor Danilo Orlandi

Danilo Orlandi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8194460
    Abstract: A selected memory cell on a selected word line is programmed through a plurality of programming pulses that are incremented by a step voltage. After a successful program verify operation, programming of the selected memory cell is inhibited while other memory cells of the selected word line are being programmed. Another program verify operation is performed on the selected memory cell. If the program verify operation fails, a bit line coupled to the selected cell is biased at the step voltage and a final programming pulse is issued to the selected word line. The selected memory cell is then locked from further programming without evaluating the final program verify operation.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: June 5, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Violante Moschiano, Michele Incarnati, Giovanni Santin, Danilo Orlandi
  • Publication number: 20110255344
    Abstract: A selected memory cell on a selected word line is programmed through a plurality of programming pulses that are incremented by a step voltage. After a successful program verify operation, programming of the selected memory cell is inhibited while other memory cells of the selected word line are being programmed. Another program verify operation is performed on the selected memory cell. If the program verify operation fails, a bit line coupled to the selected cell is biased at the step voltage and a final programming pulse is issued to the selected word line. The selected memory cell is then locked from further programming without evaluating the final program verify operation.
    Type: Application
    Filed: June 30, 2011
    Publication date: October 20, 2011
    Inventors: Violante Moschiano, Michele Incarnati, Giovanni Santin, Danilo Orlandi
  • Patent number: 7995395
    Abstract: A selected memory cell on a selected word line is programmed through a plurality of programming pulses that are incremented by a step voltage. After a successful program verify operation, programming of the selected memory cell is inhibited while other memory cells of the selected word line are being programmed. Another program verify operation is performed on the selected memory cell. If the program verify operation fails, a bit line coupled to the selected cell is biased at the step voltage and a final programming pulse is issued to the selected word line. The selected memory cell is then locked from further programming without evaluating the final program verify operation.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: August 9, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Violante Moschiano, Michele Incarnati, Giovanni Santin, Danilo Orlandi
  • Publication number: 20100246270
    Abstract: A selected memory cell on a selected word line is programmed through a plurality of programming pulses that are incremented by a step voltage. After a successful program verify operation, programming of the selected memory cell is inhibited while other memory cells of the selected word line are being programmed. Another program verify operation is performed on the selected memory cell. If the program verify operation fails, a bit line coupled to the selected cell is biased at the step voltage and a final programming pulse is issued to the selected word line. The selected memory cell is then locked from further programming without evaluating the final program verify operation.
    Type: Application
    Filed: June 8, 2010
    Publication date: September 30, 2010
    Inventors: Violante Moschiano, Michele Incarnati, Giovanni Santin, Danilo Orlandi
  • Patent number: 7751246
    Abstract: A selected memory cell on a selected word line is programmed through a plurality of programming pulses that are incremented by a step voltage. After a successful program verify operation, programming of the selected memory cell is inhibited while other memory cells of the selected word line are being programmed. Another program verify operation is performed on the selected memory cell. If the program verify operation fails, a bit line coupled to the selected cell is biased at the step voltage and a final programming pulse is issued to the selected word line. The selected memory cell is then locked from further programming without evaluating the final program verify operation.
    Type: Grant
    Filed: July 23, 2008
    Date of Patent: July 6, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Violante Moschiano, Michele Incarnati, Giovanni Santin, Danilo Orlandi
  • Publication number: 20090219761
    Abstract: A selected memory cell on a selected word line is programmed through a plurality of programming pulses that are incremented by a step voltage. After a successful program verify operation, programming of the selected memory cell is inhibited while other memory cells of the selected word line are being programmed. Another program verify operation is performed on the selected memory cell. If the program verify operation fails, a bit line coupled to the selected cell is biased at the step voltage and a final programming pulse is issued to the selected word line. The selected memory cell is then locked from further programming without evaluating the final program verify operation.
    Type: Application
    Filed: July 23, 2008
    Publication date: September 3, 2009
    Inventors: Violante Moschiano, Michele Incarnati, Giovanni Santin, Danilo Orlandi