Patents by Inventor Danish Khatri

Danish Khatri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10680598
    Abstract: A device includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch. The active gate bias driver is configured to actively drive a voltage at the gate of the switch to a first bias voltage during a first dead time of the switch and actively drive the voltage at the gate of the switch to a second bias voltage during a second dead time of the switch. The second bias voltage is different from the first bias voltage.
    Type: Grant
    Filed: February 19, 2019
    Date of Patent: June 9, 2020
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Rajeev-Krishna Vytla, Danish Khatri, Min Fang
  • Publication number: 20190260368
    Abstract: A device includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch. The active gate bias driver is configured to actively drive a voltage at the gate of the switch to a first bias voltage during a first dead time of the switch and actively drive the voltage at the gate of the switch to a second bias voltage during a second dead time of the switch. The second bias voltage is different from the first bias voltage.
    Type: Application
    Filed: February 19, 2019
    Publication date: August 22, 2019
    Inventors: Rajeev-Krishna Vytla, Danish Khatri, Min Fang
  • Patent number: 10224918
    Abstract: A device is described that includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch and an active gate bias driver configured to actively drive a voltage at the gate of the switch to a bias voltage in response to receiving an indication to deactivate the switch. The bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than a ground voltage of the gate driver.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: March 5, 2019
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Rajeev-Krishna Vytla, Danish Khatri, Min Fang
  • Publication number: 20180159520
    Abstract: A device is described that includes a gate driver configured to output, to a gate of a switch, a turn-on voltage for activating the switch in response to receiving an indication to activate the switch and an active gate bias driver configured to actively drive a voltage at the gate of the switch to a bias voltage in response to receiving an indication to deactivate the switch. The bias voltage is less than the turn-on voltage and wherein the bias voltage is greater than a ground voltage of the gate driver.
    Type: Application
    Filed: December 7, 2016
    Publication date: June 7, 2018
    Inventors: Rajeev-Krishna Vytla, Danish Khatri, Min Fang
  • Patent number: 8143729
    Abstract: A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: March 27, 2012
    Assignee: International Rectifier Corporation
    Inventors: Mark Pavier, Danish Khatri, Daniel Cutler, Andrew Neil Sawle, Susan Johns, Martin Carroll, David Paul Jones
  • Publication number: 20090218684
    Abstract: A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.
    Type: Application
    Filed: January 26, 2009
    Publication date: September 3, 2009
    Inventors: Mark Pavier, Danish Khatri, Daniel Cutler, Andrew Neil Sawle, Susan Johns, Martin Carroll, David Paul Jones