Abstract: Systems and methods for classifying user intent based on the user interaction with an entry bar on a user device include receiving an input from a user in an entry box; classifying the input into a category of a plurality of categories including a category for an Artificial Intelligence (AI) session for an AI agent; and performing an action responsive to the classified category, including utilizing the AI agent for the AI session when the category is the category for the AI session and bypassing the AI agent for other categories of the plurality of categories.

Abstract: Systems and methods for Artificial Intelligence (AI) model bundling and splitting for widescale distribution include obtaining an Artificial Intelligence (AI) model having a plurality of layers; producing a plurality of slices, each slice is a layer and an associated encoding of the layer; determining a header and a trailer each defining a previous slice and a next slice, respectively, and optimization coefficients; and serving the plurality of slices and corresponding headers, trailers, and optimization coefficients.

Abstract: Systems and methods for classifying user intent based on the user interaction with an entry bar on a user device include receiving an input from a user in an entry box; classifying the input into a category of a plurality of categories including a category for an Artificial Intelligence (AI) session for an AI agent; and performing an action responsive to the classified category, including utilizing the AI agent for the AI session when the category is the category for the AI session and bypassing the AI agent for other categories of the plurality of categories.

Abstract: Systems and methos for using general-purpose Artificial Intelligence (AI) models as special purpose classifiers include utilizing a prompt for a general-purpose model with the prompt including instructions to perform a classification of an input into one of a plurality of categories; tokenizing the prompt and the input into a plurality tokens including a unique token for each of the plurality of categories; biasing weights of the plurality of tokens such that the unique token for each of the plurality of categories have greater weights than other tokens of the plurality of tokens; and inputting the plurality of tokens with their corresponding weights into the AI model.

Abstract: Systems and methods are provided as an AI-powered web browser companion. A method, according to one implementation, includes a step of locally monitoring user interactions during a web browsing session associated with a client device operating within a browser environment. The method also includes a step of locally determining user interests, user preferences, and behavioral patterns based on the monitored user interactions and further based on previously stored web browsing sessions. Furthermore, the method includes a step of providing personalized content and predictive navigation assistance in the browser environment based on the user interests, user preferences, and behavioral patterns.

Abstract: Systems and methods are provided as a web page management tool. A method, according to one implementation, includes a step of analyzing a plurality of browsing pages that are currently open and active on a Graphical User Interface (GUI), each browsing page related to a user browsing session. The method also includes a step of employing a Machine Learning (ML) model to determine when to close one or more pages of the plurality of browsing pages based on predefined conditions. Before closing the one or more pages, the method also includes a step of archiving metadata and at least a portion of content related to each of the one or more pages to thereby enable a user to retrieve at least a portion of the one or more pages at a later time.

Abstract: Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided. The methods include, for instance, forming a transistor of the semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor including plurality of sacrificial gate structures and protective masks at upper surfaces of the plurality of sacrificial gate structures; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height.

Abstract: Semiconductor structures and fabrication methods are provided having a bridging film which facilitates adherence of both an underlying layer of dielectric material and an overlying stress-inducing layer. The method includes, for instance, providing a layer of dielectric material, with at least one gate structure disposed therein, over a semiconductor substrate; providing a bridging film over the layer of dielectric material with the at least one gate structure; and providing a stress-inducing layer over the bridging film. The bridging film is selected to facilitate adherence of both the underlying layer of dielectric material and the overlying stress-inducing layer by, in part, forming a chemical bond with the layer of dielectric material, without forming a chemical bond with the stress-inducing layer.

Abstract: Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided. The methods include, for instance, forming a transistor of the semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor including plurality of sacrificial gate structures and protective masks at upper surfaces of the plurality of sacrificial gate structures; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height.

Abstract: Semiconductor structures and fabrication methods are provided having a bridging film which facilitates adherence of both an underlying layer of dielectric material and an overlying stress-inducing layer. The method includes, for instance, providing a layer of dielectric material, with at least one gate structure disposed therein, over a semiconductor substrate; providing a bridging film over the layer of dielectric material with the at least one gate structure; and providing a stress-inducing layer over the bridging film. The bridging film is selected to facilitate adherence of both the underlying layer of dielectric material and the overlying stress-inducing layer by, in part, forming a chemical bond with the layer of dielectric material, without forming a chemical bond with the stress-inducing layer.

Abstract: Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided. The methods include, for instance, forming a transistor of the semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor including plurality of sacrificial gate structures and protective masks at upper surfaces of the plurality of sacrificial gate structures; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height.

Abstract: Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided. The methods include, for instance, forming a transistor of the semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor including plurality of sacrificial gate structures and protective masks at upper surfaces of the plurality of sacrificial gate structures; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height.

Abstract: An extended depth of field three-dimensional nano-resolution imaging method includes: creating an optical module with a double helix point spread function and multi-stage imaging properties of a defocus optical grating; obtaining double helix image of a molecule by imaging a molecule using the optical module; determining a lateral position of the molecule according to a position of a midpoint of double helix sidelobes on the imaging plane in the double helix image; determining an axial position of the molecule according to a rotation angle of a line of centers of the double helix sidelobes on the imaging plane and the position of the midpoint of the double helix sidelobes on the imaging plane in the double helix image. The double helix point spread function and the defocus optical grating multi-stage imaging are combined to implement three-dimensional imaging to extended the depth of field and to improve the resolution.