Abstract: A class G headphone amplifier circuit with improved power efficiency and low EMI. It may use an automatic signal level detector to detect the signal level of incoming signals and determine positive and negative power supplies for headphone amplifiers accordingly. A voltage generator may generate pairs of differential output voltages at a plurality of amplitude steps, and supply to headphone amplifiers the pair with the amplitude determined by the automatic signal level detector. As a result, headphone amplifiers are biased according to the input signal level, and the multiple voltage rails may improve power efficiency and avoid clipping.

Abstract: A class G headphone amplifier circuit with improved power efficiency and low EMI. It may use an automatic signal level detector to detect the signal level of incoming signals and determine positive and negative power supplies for headphone amplifiers accordingly. A voltage generator may generate pairs of differential output voltages at a plurality of amplitude steps, and supply to headphone amplifiers the pair with the amplitude determined by the automatic signal level detector. As a result, headphone amplifiers are biased according to the input signal level, and the multiple voltage rails may improve power efficiency and avoid clipping.

Abstract: A class G headphone amplifier circuit with improved power efficiency and low EMI. It may use an automatic signal level detector to detect the signal level of incoming signals and determine positive and negative power supplies for headphone amplifiers accordingly. A voltage generator may generate pairs of differential output voltages at a plurality of amplitude steps, and supply to headphone amplifiers the pair with the amplitude determined by the automatic signal level detector. As a result, headphone amplifiers are biased according to the input signal level, and the multiple voltage rails may improve power efficiency and avoid clipping.

Abstract: A class G headphone amplifier circuit with improved power efficiency and low EMI. It may use an automatic signal level detector to detect the signal level of incoming signals and determine positive and negative power supplies for headphone amplifiers accordingly. A voltage generator may generate pairs of differential output voltages at a plurality of amplitude steps, and supply to headphone amplifiers the pair with the amplitude determined by the automatic signal level detector. As a result, headphone amplifiers are biased according to the input signal level, and the multiple voltage rails may improve power efficiency and avoid clipping.

Abstract: There is herein described a single handle pressure balancing spool valve for mixing user-adjustable hot and cold water flow to a fixture such as a shower or tub and to adjust the rate of mixed water flow. A rotatable disc with hot and cold intake openings and an outlet opening are provided which control the degree of covering on the inlet ports of the valve. Pressure balancing of inlet pressure is provided within the valve by means of a piston-cylinder assembly to compensate for fluctuations in water inlet pressure to avoid scalding of the user.

Abstract: A unique photoresist process is provided which achieves clean and complete lift-off of a thin film layer such as a sputtered thin film formed on a photoresist which is formed above a semiconductor substrate. The process of the present invention relies on a reentrant photoresist profile which breaks the continuity of the thin film layer. Accordingly, the process of the present invention ensures a clean lift-off. The desired photoresist profile which breaks the continuity of the thin film layer can be obtained by a typical photoresist process preceded by an oxidation process that takes place on the surface of the semiconductor substrate. The oxidation process provides a thin native oxide layer with thickness ranging from about 30 to 50 .ANG.. No extra processing steps involving dielectric film deposition and etch are required to achieve clean lift-off. Nevertheless, the process of the present invention ensures the clean lift-off of the thin film layer.

Abstract: A method of fabricating a self-aligned double gate recess profile in a semiconductor substrate is disclosed in which a first mask layer is formed over the substrate. A second mask layer having an opening is formed over the first mask layer. An opening at least as wide as the second mask layer's opening is formed through the first mask layer to expose the substrate beneath the second mask layer's opening. A first recess is etched in the semiconductor through the second mask layer's opening. The first mask layer's opening is then uniformly expanded and a wider recess, aligned to the first recess, is then formed in the semiconductor. The method is particularly applicable to the formation of self-aligned gate and channel recesses in a GaAs MESFET.

Abstract: A semiconductor substrate is etched in a two-step sequence, with two different liquid etchants that have different lateral etch rates. The relative time periods for which the etchants are applied are selected to achieve a close match between the actual etch profile and the desired profile. The process is particularly applicable to the formation of a gate recess in a GaAs MESFET for high power amplification.