Patents by Inventor Danny Nim

Danny Nim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High density trench DMOS transistor with trench bottom implant
    Patent number: 5929481
    Abstract: A trenched DMOS transistor overcomes the problem of a parasitic JFET at the trench bottom (caused by deep body regions extending deeper than the trench) by providing a doped trench bottom implant region at the bottom of the trench and extending into the surrounding drift region. This trench bottom implant region has the same doping type, but is more highly doped, than the surrounding drift region. The trench bottom implant region significantly reduces the parasitic JFET resistance by optimizing the trench bottom implant dose, without creating reliability problems.
    Type: Grant
    Filed: November 4, 1997
    Date of Patent: July 27, 1999
    Assignee: Siliconix incorporated
    Inventors: Fwu-Iuan Hshieh, Brian H. Floyd, Mike F. Chang, Danny Nim, Daniel Ng