Patents by Inventor Danny P. C. Shum

Danny P. C. Shum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for fabricating a non-volatile memory cell in a semiconductor device
    Patent number: 5633186
    Abstract: A process for fabricating a non-volatile memory cell (10) in a semiconductor device includes the formation of a doped region (28) in a semiconductor substrate (40) underlying a floating gate electrode (16) and separated therefrom by a tunnel dielectric layer (44). Stress induced failure of the tunnel dielectric layer (44) is avoided by laterally diffusing dopant atoms under the floating gate electrode (16) after completely fabricating both the floating gate electrode (16) and the underlying tunnel dielectric layer (44).
    Type: Grant
    Filed: August 14, 1995
    Date of Patent: May 27, 1997
    Assignee: Motorola, Inc.
    Inventors: Danny P. C. Shum, Ko-Min Chang, William J. Taylor, Jr.