Abstract: A neutron detector and method of manufacture are provided. The neutron detector includes a sensing element structure having a substrate with a front surface and a back surface, opposite to the front surface. A semiconductor sensing element is fabricated in an active semiconductor layer on the front surface of the first substrate and is sensitive to a charged particle. A neutron conversion structure is attached to the back surface and includes neutron conversion material that emits the charged particle in response to a reaction with neutrons.

Abstract: A neutron detector and method are provided. The detector includes a neutron conversion material that emits charged particles in response to a reaction with neutrons, a plurality of semiconductor sense elements that are sensitive to the charged particles, and a latch coupled to an output of semiconductor sense elements.

Abstract: An AMEL display is formed and operated in a manner to provide enhanced gray scale or color operation. The AMEL display is operated over consecutive illumination frames which are partitioned into a plurality of passes. The desired illumination intensity for a given pixel during each illumination frame is determined and the pixel is activated for a substantially equal duration in each pass to provide the desired illumination level for each frame. Each pass has an associated illumination profile signal composed of a plurality of discrete steps for selectively passing a number of illumination pulses to each active EL cell in the display in accordance with a pixel activation voltage loaded into each active EL cell. The pixel activation voltage and illumination profiles cooperate to distribute the number of illumination pulses in a substantially equal fashion in each pass of an illumination frame. Pixel driver circuits are disclosed for operating the pixel in accordance with the disclosed illumination methods.