Patents by Inventor Danti Chen

Danti Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for a GaN vertical microcavity surface emitting laser (VCSEL)
    Patent number: 11095096
    Abstract: Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: August 17, 2021
    Assignee: Yale University
    Inventors: Jung Han, Chia-Feng Lin, Danti Chen
  • Large-area, laterally-grown epitaxial semiconductor layers
    Patent number: 9711352
    Abstract: Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: July 18, 2017
    Assignee: Yale University
    Inventors: Jung Han, Jie Song, Danti Chen
  • LARGE-AREA, LATERALLY-GROWN EPITAXIAL SEMICONDUCTOR LAYERS
    Publication number: 20160027636
    Abstract: Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.
    Type: Application
    Filed: March 14, 2014
    Publication date: January 28, 2016
    Applicant: Yale University
    Inventors: Jung HAN, Jie SONG, Danti CHEN
  • METHOD FOR A GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL)
    Publication number: 20150303655
    Abstract: Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.
    Type: Application
    Filed: April 15, 2015
    Publication date: October 22, 2015
    Applicant: Yale University
    Inventors: Jung Han, Chia-Feng Lin, Danti Chen