Abstract: Disclosed are devices comprising multiple nanogaps having a separation of less than about 5 nm. Also disclosed are methods for fabricating these devices.

Abstract: Structures useful for forming contacts to materials having low charge carrier mobility are described. Methods for their formation and use are also described. These structures include interdigitated electrodes capable of making electrical contact to semiconducting materials having low electron and/or whole mobility. In particular, these structures are useful for organic semiconducting devices made with conducting polymers and small molecules. They are also useful for semiconducting devices made with nanocrystalline semiconductors.

Abstract: A transfer chamber is disclosed having a first plate with a first surface configured to receive a sample and a second surface containing a groove. The second surface of the first plate surrounds the first surface of the first plate. A second plate has a first surface and a second surface containing a groove. A sealing component is disposed in the groove of the first plate or the second plate. A pivotable link couples the first plate and the second plate. The pivotable link is configured to hold the first plate, the second plate, and the sealing component together to substantially create an air-tight seal between the first surface of the first plate and the second surface of the second plate. The pivotable link is configured to open the seal in response to a pressure differential across the transfer chamber.

Abstract: Disclosed are copolymers of carbon nanotubes, as well as processes and applications of carbon nanotube dispersions. Carbon nanotube emulsions and related technology are also disclosed. The controlled deposition of carbon nanotubes on substrates is also provided. Methods of purifying single-walled carbon nanotubes are also provided. Devices made according to the disclosed methods are further described herein.

Abstract: Disclosed are devices comprising multiple nanogaps having a separation of less than about 5 nm. Also disclosed are methods for fabricating these devices.